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The 28GHz Pin Diode SP4T switch is an advanced switching solution operating in the range of 24 to 32GHz. Featuring a low insertion loss of approximately 0.8dB, this switch excels in maintaining signal fidelity across its operational bandwidth. With an isolation exceeding 23dB, it is crafted to manage high-isolation applications efficiently. This switch is crafted with precision using state-of-the-art design methodologies to ensure robust performance and reliability in high-frequency applications. Designed for demanding environments such as wireless communications, the 28GHz switch utilizes surface-mount technology to facilitate easy and effective integration into modern circuit designs. The switch's low insertion loss and high isolation attributes are crucial for maintaining the quality and integrity of signal transmission. The SP4T configuration provides versatile switching capabilities, making it highly suitable for complex multiplexing environments. This product is particularly useful in modern telecommunications infrastructure, supporting both data and voice signals with minimal interference and attenuation, thus ensuring seamless, high-quality connectivity across systems.
This 5G mmWave module is a sophisticated 39GHz power amplifier designed with a 0.15μm PHEMT process, suitable for uses in mmWave 5G systems. It features a frequency range of 38 to 42GHz, making it an ideal solution for high-frequency applications. The amplifier showcases a gain of 19dB and achieves an impressive P-1dB of 31dBm, facilitating superior linearity and performance across its operational bandwidth. With a third-order intercept point (IP3) of 40dBm, this amplifier ensures robust signal integrity and significant power output. The device is encapsulated in a surface-mount technology (SMT) package, which optimizes space efficiency and facilitates easier integration into larger systems or assemblies. The design is tailored to deliver 1W of power, essential for modern high-bandwidth communications needs. By employing the 0.15μm PHEMT technology, this MMIC amplifier is engineered to meet stringent requirements for power and efficiency in a compact form factor. Such configurations ensure its applicability in dense networking environments typical of next-generation telecommunications infrastructure. This enables the amplifier to handle the demanding bandwidth and power requirements expected in cutting-edge wireless communication modules, making it a versatile component in various high-frequency RF applications.
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