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PermSRAM is a sophisticated nonvolatile memory macro designed to operate on standard CMOS platforms, spanning process nodes from 180nm to 28nm and beyond. It supports a wide variety of nonvolatile memory functions, including a one-time programmable ROM and a pseudo multi-time PROM with exceptional multi-page configuration capabilities. The memory sizes range from 64 bits to 512Kbits, making it highly versatile for various applications. It features a non-rewritable hardware safety lock, specifically for secure code storage, ensuring data integrity and security.\n\nPermSRAM's robust design supports security code storage, program storage, and analog trimming, among other applications. It also provides features like gamma correction and chip ID management, making it suitable for complex tasks. The memory benefits from a compact silicon area, being tamper-resistant due to its invisible charge trap mechanism. Its built-in self-test circuits ensure seamless testing environments and all bits can be tested using conventional test equipment. Furthermore, it offers automotive-grade data retention capabilities, functioning optimally under high temperatures.\n\nCustomers benefit from its cost-efficiency, as it does not require a charge pump for read operations, which simplifies the design and lowers costs. The product's compatibility with conventional test strategies and its suitability for high-temperature environments make it an ideal choice for automotive applications and other demanding industrial uses.
TwinBit Gen-1 by NSCore is an innovative non-volatile memory solution that leverages electrical erase operations. It offers a memory density ranging from a minimum of 64 bits to a maximum of 512K bits, engineered to perform multiple program/erase cycles without additional masking layers, ensuring cost-effectiveness. The design is compatible with CMOS logic processes, supporting process nodes from 180nm to 55nm, which allows seamless integration into advanced technological environments. Its security features make it suitable for storing security keys and analog trimming data required for specific applications.\n\nThis memory technology emphasizes high endurance, with the ability to endure more than 10,000 program and erase cycles. TwinBit Gen-1’s design mandates no extra masks or process alterations, incorporating a true logic-based approach for non-volatile memory development. It supports a broad spectrum of applications including IoT devices, microcontrollers, field-programmable gate arrays (FPGAs), and application-specific standard products with re-writable firmware.\n\nIn terms of reliability, TwinBit Gen-1 is capable of automotive-grade data retention according to AEC-Q100 standards, making it ideal for applications that require low-voltage and low-power operation. Its built-in testing mechanisms facilitate stress-free verification, ensuring that it only requires conventional test equipment. The memory's durability, combined with cost-efficient production, positions it as an optimal choice for specialized sectors needing flexible memory solutions.
TwinBit Gen-2 represents the next evolution of non-volatile memory from NSCore, designed for advanced semiconductor processes from 40nm down to 22nm. This generation preserves the TwinBit legacy of not requiring additional masks or process steps, thus maintaining cost efficiency for large-scale applications. It incorporates a novel Pch Schottky Non-Volatile Memory Cell structure, which enables ultra-low-power operations essential for today’s energy-conscious applications.\n\nThe Pch Schottky NVM cell is engineered for minimal power consumption, helping clients design products that are power-efficient while providing reliable memory solutions. TwinBit Gen-2 supports a range of sophisticated applications, including hot carrier injection control via cell biasing, suitable for program and erase operations. Enhancements in hot-hole generation distribution during programming, and hot-electron distribution during erasing, contribute to its improved performance metrics.\n\nThe IP is suitable for high-performance applications requiring a combination of low power consumption and high-density memory solutions. Its design favors applications in modern consumer electronics and automotive industries that require state-of-the-art memory solutions to manage increasingly complex data processing needs efficiently and reliably.
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