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PermSRAM is a dynamic non-volatile memory macro designed to be implemented on standard CMOS platforms, spanning process nodes from 180nm to 22nm and beyond. This memory technology offers a suite of functions including one-time programmable ROM and a multi-time programmable ROM, adaptable through its multi-page configuration. PermSRAM covers a wide range of memory sizes from 64 bits to 512K bits, making it versatile for numerous applications. The memory ensures security with its non-rewritable hardware lock, ideal for storing sensitive security codes. Its invisible charge trap memory mechanism makes it tamper-resistant without needing a charge pump for read operations. Furthermore, the built-in self-test circuit simplifies testing processes, supporting conventional test equipment for ease of use. Targeted applications include analog trimming, program storage, and memory repair, among others. The PermSRAM memory is also optimized for environments demanding high reliability, with proven stability and superior performance. Its capabilities make it an excellent choice for sectors that require robust data retention, even at automotive-grade temperatures exceeding 150 degrees Celsius.
TwinBit Gen-1 is an embedded non-volatile memory solution that excels in high-endurance performance, suitable for process nodes ranging from 180nm to 55nm. This memory type is seamlessly incorporated into CMOS logic processes without the need for additional masks or processing steps, making it highly efficient and cost-effective. Engineered for low-voltage and low-power operations, TwinBit Gen-1 is ideal for various applications such as IoT devices, ASICs, and systems requiring embedded NOR FLASH. It offers high density and a small physical footprint, maintaining data integrity and performance even under extreme conditions, up to automotive-grade standards specified by AEC-Q100. Its technology supports operations like analog trimming and security key storage, with built-in test circuits facilitating straightforward testing. TwinBit Gen-1's compatibility extends to products that need field-rewritable functionalities, reflecting its flexibility and application versatility across multiple domains.
TwinBit Gen-2 expands the capabilities of true logic-based non-volatile memory across advanced process nodes from 40nm to 22nm and beyond. This generation continues the tradition of eschewing additional masks or process requirements, offering ultra-low-power operations with its innovative Pch Schottky Non-Volatile Memory Cell. This memory type leverages hot carrier injection and advanced cell bias control to perform program and erase functions effectively. It stands out for its low-power footprint, ensuring efficient performance in different technological applications. These features make it suitable for refined uses within sectors that demand cutting-edge, power-efficient memory solutions. TwinBit Gen-2 is designed to integrate effortlessly into sophisticated electronic devices, supporting high-density memory applications without compromising on reliability or performance standards. Its groundbreaking design underlines NSCore’s commitment to delivering robust non-volatile memory solutions for modern semiconductor challenges.
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