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NanoSILICON, Inc.

Based in San Jose, California, NanoSILICON, Inc. is a prominent player in the semiconductor industry, specializing in the provision of high-quality silicon wafer processing services. A core focus of their operations revolves around thermal oxide processing, which is a critical stage in the manufacture of semiconductor devices. This process involves the creation of a thin silicon dioxide layer on the surface of a silicon wafer, serving as an essential insulating layer in microelectronics. NanoSILICON has fine-tuned both dry and wet oxidation processes to deliver consistent, high-quality results. The company uses ultra-pure steam and oxygen in its horizontal furnaces to achieve outstanding thickness uniformity across and between wafers. The precision of their thermal oxide films is validated using sophisticated white light reflection techniques that ensure optimum refractive index and film stress parameters. With a commitment to innovation and precision, NanoSILICON's offerings include tailored oxide thicknesses ranging from 500 Ångströms to 100,000 Ångströms, alongside process temperature control between 800°C and 1050°C. They accommodate various wafer sizes and materials, enhancing their versatility in semiconductor manufacturing. As such, NanoSILICON stands out as a reliable partner for companies needing intricate and reliable silicon wafer processing solutions. Read more

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Thermal Oxide Processing

Infused with innovation, Thermal Oxide Processing is a cornerstone of semiconductor device production at NanoSILICON, Inc. Specializing in both wet and dry thermal oxidation, the company enhances silicon wafers with a silicon dioxide layer, which is vital as an insulator in microelectronic devices. Their processes utilize ultra-high purity sources of steam and oxygen, ensuring films with outstanding density and breakdown voltage. The oxidation furnaces, ranging in temperature from 800°C to 1050°C, provide consistent oxide growth with precise control over thickness and uniformity. The company's measurement techniques are notably advanced, involving white light reflection combined with spectrometer data to fine-tune optical parameters, thus ensuring a superior fit and film thickness accuracy across the wafer. By supporting wafer sizes from 50.8mm to 300mm in various materials like Silicon on Insulator and Quartz, NanoSILICON's thermal oxide capabilities cater to diverse semiconductor fabrication needs. Their proficiency in managing film stress and refractive index further demonstrates their expertise in delivering tailored silicon processing solutions.

NanoSILICON, Inc.
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Analog Subsystems
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