Green Mountain Semiconductor Inc.

LPDDR4/4X/5 Secondary/Slave PHY

This LPDDR4/4X/5 PHY is designed as a memory-side interface IP primarily implemented within commodity DRAM products. It offers a seamless opportunity to enable data transmission between a diverse range of devices, such as AI coprocessors and in-memory compute solutions. As a memory-side interface, it is essential for AI processors and other ASICs requiring the latest high-speed, low-power LPDDR interface protocols. By adhering to the well-defined LPDDR4X and LPDDR5 standards as specified by JEDEC, the PHY supports varied memory types, including DRAM, SRAM, and emerging memory technologies like non-volatile memories with necessary adaptations. The IP is initially developed for TSMC's 7nm technology but can be adapted to other processes, making it versatile and suitable for contemporary and future memory applications.\n\nTechnological innovation guided by JEDEC standards ensures enhanced compatibility and functionality across current and emerging products. The Green Mountain's LPDDR4X/5 combo IP not only helps manage general-purpose data transfers but also maintains exceptional low power consumption and high-speed processing performance. It bridges the gap between memory and processing units, facilitating smoother, faster, and more reliable communication essential for modern digital solutions. Its adaptation to various kinds of memory components underscores its flexibility and utility in a wide array of applications. Furthermore, the PHY's design facilitates easy transitioning and interoperability, broadening its implementation scope.\n\nGreen Mountain Semiconductor's focus on memory-side interfaces highlights their expertise in managing and programming complex data interactions. The product's ability to integrate with multiple processing environments reinforces the company's reputation for designing adaptable, high-performance memory solutions. This PHY is ideal for high-speed computing and data-intensive applications, offering improvements in speed and power efficiency, key attributes for the next-generation memory interfaces in different industrial sectors.