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The GS61008P Enhancement Mode GaN Transistor excels in delivering high power performance with its efficient and compact design. Capable of handling high currents, this transistor minimizes on-resistance, ensuring minimal energy loss, which is crucial for high-density power converters. Designed for bottom-side cooling, it offers superior thermal management, effectively dissipating heat to ensure stable operation. Its small footprint and enhanced electrical characteristics make it a preferred choice in systems requiring high power efficiency, from renewable energy setups to cutting-edge consumer electronics products.
The GS-065-004-1-L GaN Transistor is engineered to provide cutting-edge performance in power conversion applications. This component is known for its rapid switching capabilities and exceptional efficiency, thanks to its low on-resistance. It is designed primarily for power-critical applications, fostering innovations in industrial and renewable energy sectors. By minimizing energy loss, the GS-065-004-1-L helps in achieving substantial energy savings, enhancing the economic and environmental appeal of modern power designs.
The GS61004B Enhancement Mode GaN Transistor is a groundbreaking semiconductor device that offers significant improvements in power conversion efficiency. Its design is centered around providing high current and low on-resistance, making it suitable for a wide range of applications including power adapters and industrial power supplies. With a robust package and bottom-side cooling, this transistor enhances thermal management, allowing for reliable operation even in demanding environments. Its compact form and efficient performance characteristics are set to redefine power electronics, offering designers a versatile component for high-performance systems.
The GS66516T represents a state-of-the-art GaN Transistor engineered for high-performance applications. It offers significant improvements in power conversion techniques, reducing energy losses and enhancing thermal management. Capable of supporting high current levels with its advanced structure, this component is ideal for sectors needing optimal power solutions such as telecommunications and renewable energy setups, ensuring durable and consistent operational benefits.
The GS66506T Transistor is equipped with top-side cooling, offering significant thermal advantages for systems with high power densities. This product reduces the on-resistance further to provide efficient power management suitable for cutting-edge applications in sectors such as aerospace and defense. With a compact form factor, it allows for seamless integration into high-performance solutions, providing engineers with a reliable component for demanding operational environments.
The GS-065-018-2-L GaN Transistor is a formidable solution designed to handle high power requirements with ease and reliability. With low on-resistance and a design that prioritizes thermal management, this transistor is perfect for high-performance sectors such as data centers and commercial power systems. It liberates designers from the constraints of silicon-based components by offering improved power density, efficiency, and size reduction capabilities to meet the challenges of modern electronics applications.
The GS66502B GaN Transistor offers enhanced power efficiency, a critical component for advanced power systems requiring rapid switching and reliable performance. Its low on-resistance enables effective power management, paving the way for efficient design in markets like telecommunications and high-tech industrial setups. This plug-and-play solution streamlines integration into existing designs while laying a foundation for future innovations in power electronics.
Delivering reliable performance at high voltages, the GS-065-008-1-L 650V Enhanced GaN Transistor is crafted to meet the needs of power-hungry applications. With its low on-resistance and efficient thermal characteristics, this transistor supports advanced systems requiring continuous & reliable power handling. This GaN transistor stands out by providing high speed switching and efficient power conversion in demanding environments like industrial machinery and power distribution frameworks.
The GS-065-011-2-L, synonymous with efficiency and performance, is optimized for applications needing robust solutions to manage power efficiently. Its innovative design lowers on-resistance and enhances heat dissipation, crucial for efficient operation in automotive and renewable energy technologies. The device meets high industry standards for reliability and endurance, ensuring long-term performance in systems where power consistency and thermal stability are critical.
The GS-065-060-3-B is a versatile GaN Transistor designed for compact applications demanding high efficiency and minimal space consumption. This product efficiently manages power with its low on-resistance and advanced thermal management, supporting contemporary electronics and complex industrial controls. Its robust yet streamlined design offers a premiere choice for developers looking to enhance the functionality and output of space-sensitive power solutions.
Engineered for high-power applications, the GS-065-060-5-B-A GaN Transistor is designed to deliver consistent power management capabilities. With a specialized package supporting bottom-side cooling, it excels in thermal conductivity and power efficiency. This feature-rich transistor supports high current flows, making it suitable for large industrial machines and renewable energy generators where reliability and efficiency are paramount.
The GS66508T GaN Transistor combines high power handling with excellent thermal performance, making it perfect for applications in demanding environments. It features a low on-resistance and optimized gate charge, enabling exceptional efficiency in power conversion. This transistor is engineered for power-intensive industries, including automotive and large-scale industrial control systems. Its robust architecture and high efficiency make it a key component in the movement towards more sustainable and efficient electronic advancements.
The GS66516B GaN Transistor is tailored for high current operations, offering remarkable efficiency and reliability in power-driven environments. Its innovative design facilitates low on-resistance and high thermal management capabilities, which are crucial for maintaining stability and performance in high-power applications like industrial automation and large-scale power grids. Its robust packaging ensures longevity and durability, enabling engineers to develop solutions that handle power structurally and efficiently.
The GS-065-011-1-L GaN Transistor is a powerful semiconductor designed for devices that demand high power and efficiency. It boasts of reduced on-resistance and superior thermal management, key for applications in energy storage and heavy-duty power conversion. This transistor's ability to handle high power levels without sacrificing efficiency makes it a vital component for sectors focusing on sustainable energy production and efficient industrial systems.
The GS-065-060-5-T-A is a high current GaN transistor ideal for applications that demand robust current delivery without compromising on efficiency. This advanced component is lightweight yet powerful, featuring a low on-resistance and substantial gate charge capacity, enhancing the overall system performance in challenging operational conditions. The top-side cooling capability further mitigates thermal issues, making it suitable for dynamic environments such as modern data centers and hybrid automotive power systems.
A top-side cooled variant, the GS61008T Enhancement Mode GaN Transistor revolutionizes power management with its outstanding thermal performance and superior power handling capability. It couples high current throughput with reduced on-resistance, optimizing power efficiency in compact spaces. Its robust construction makes it well-suited for applications in harsh operating conditions, including advanced computing equipment and next-generation telecom infrastructure. The GS61008T presents an ideal solution for designs aimed at reducing size while maximizing output efficiency.
Designed for high-voltage applications, the GS66504B GaN Transistor is focused on delivering consistent and efficient power management. It performs exceptionally well under high-current conditions, minimizing energy losses with its low on-resistance design. Key applications include renewable energy systems and high-voltage industrial equipment, where its advanced attributes contribute to enhanced reliability and efficiency. This GaN transistor embodies the shift towards more sustainable and cost-effective electronics solutions.
Engineered for high-efficiency, the GS-065-030-2-L GaN Transistor excels in power management applications that demand rapid switching and minimal energy loss. This component stands out with its excellent thermal properties and low on-resistance, making it ideal for use in diverse fields such as industrial automation and power conditioning. As a core part of next-generation power systems, it enables massive scale integration of energy-efficient technologies with ease and consistency.
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