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LEE Flash G1 is a highly efficient SONOS-based embedded Flash solution tailored for medium capacity memory requirements. By leveraging a refined SONOS architecture, it ensures minimal changes to existing standard CMOS processes, allowing for seamless integration into current designs without altering the logic characteristics. G1 supports high-temperature reliability and long-term data retention, making it an ideal choice for automotive applications. This product excels in reducing cost thanks to its low power consumption during programming and erasure operations, supported by 2 to 3 additional masks, a significant economization compared to typical Flash solutions. The architecture supports a high number of program/erase cycles and guarantees stable retention over temperature extremes, which is crucial for automotive and industrial applications. Its architecture allows for the reuse of existing IP assets, thus eliminating the need for additional expensive investments on Flash technology-specific designs. Manufacturing adaptations are minimal, aimed at keeping chip costs low while delivering reliable, high-speed performance.
LEE Flash G2 is an innovative Flash technology that extends beyond traditional Flash memory capabilities, designed for large-capacity applications requiring seamless integration with standard CMOS logic circuits. This solution offers direct and low-cost connection to existing volatile logic circuits without needing high voltage for read operations. By utilizing unique VDD operation technology, the G2 enables chip designers to create non-volatile functions directly in standard logic circuits like SRAM, opening new potential for creative and efficient memory applications. This ease of integration is facilitated by the solution’s elimination of additional high voltage areas and minimal mask requirements, thus significantly lowering the costs and time associated with chip development. G2's robust temperature endurance and long retention life meet stringent automotive criteria, enhancing its reliability and adoption in demanding applications. It stands out for its low power program/erase cycles that make it a cost-effective answer for power-sensitive use cases.
LEE Flash ZT is designed as a zero-additional-mask MTP solution that is perfect for applications requiring automotive-grade robustness and efficiency. Distinguished by its ease of implementation, ZT is crafted specifically for sensor controllers, power circuits, and analog ICs that need reliable trimming and parameter storage. This Flash provides an economical approach to memory programming with its support for standard CMOS processes, which facilitates the reuse of existing designs without incurring additional manufacturing costs. The ZT model operates with minimal power, making it ideal for industries where power consumption is a critical aspect. ZT's engineering ensures excellent data retention over extended periods and under high-temperature stresses, fitting perfectly into the rigorous demands of automotive technology without requiring any additional masking. This combination of traits makes ZT an ideal solution for cost-conscious projects requiring durable NVM capabilities.
LEE Fuse ZA stands out as an Anti-Fuse Non-Volatile Memory suitable for trimming tasks that do not demand reprogramming. This solution is particularly valued for its application in memory redundancy without the necessity for additional manufacturing steps or mask alterations. ZA leverages a low-complexity manufacturing methodology needing only a basic metal layer setup, distinguishing itself by its suitability for advanced processes. With its versatile compatibility across various process nodes from 180nm to sub-10nm, it is a practical choice for diverse technological requirements. This memory type excels in high-temperature applications, making it particularly useful in automotive sectors where reliability and durability over extended operational periods are crucial. As a proven design, ZA caters to projects looking for cost-effective, robust, and easy-to-deploy NVM solutions.
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