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Floadia Corporation

Floadia Corporation is an innovation-driven company at the forefront of semiconductor technology, particularly specializing in non-volatile memory IP and AI. Headquartered in Japan, Floadia aims to revolutionize the integration of semiconductor memory to mimic brain functions, thereby creating advanced electronic intelligence solutions that are both secure and energy-efficient. Their commitment to smart society solutions highlights their dedication to designing embedded memories that prioritize reliability, scalability, and efficiency in power consumption. The company's primary business units focus on developing sophisticated nonvolatile memory IP that is easily integrated within a variety of electronic devices, such as in-vehicle microcontrollers, smartphones, wearables, and home appliances. Alongside their nonvolatile memory IP business, Floadia is pushing the boundaries of AI technology with their high-precision analog memory technology, further pushing the vision of realizing electronic intelligence. These combined efforts underscore their mission to create a world where electronic systems perform with agility and intelligence similar to biological systems. Floadia's advanced semiconductor solutions are backed by their innovative product lineup of flash memory and fuse technologies. Notably, the LEE Flash series and LEE Fuse are designed to offer scalable, cost-effective, and energy-efficient memory solutions across various applications. These include automotive systems requiring stringent temperature and durability standards, as well as other sectors demanding minimal additional processing costs. Through these products, Floadia sets the benchmark for the development of cutting-edge electronic components essential for a digitally transformative future. Read more

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IPs available

LEE Flash G1

The LEE Flash G1 is designed to cater to cost-sensitive embedded flash applications, leveraging a simple SONOS architecture that scales efficiently down to 40nm. This flash technology is perfect for moderate memory capacity needs, typically up to several hundred kilobytes, making it suitable for automotive and power-sensitive tasks. The G1 Flash supports a wide temperature range, enhancing its viability for extreme automotive requirements and ensuring long-term data retention stability. One of the standout features of the LEE Flash G1 is its power efficiency, characterized by low power consumption during program and erase cycles. This efficiency is achieved through Fowler-Nordheim tunneling technology, drastically minimizing power requirements compared to traditional methods. Furthermore, this technology simplifies the integration of flash memory by requiring only 2 to 3 additional masks, reducing the overall cost and complexity of chip fabrication. Operating on a standard CMOS logic process without altering the SPICE model, LEE Flash G1 allows for the re-use of existing IPs and design assets, offering a path to cost savings and simplifying design processes. The G1's architecture also shortens baking and testing times, significantly cutting down on chip production costs while maintaining quality and reliability under rigorous conditions.

Floadia Corporation
Embedded Memories, Flash Controller, NAND Flash
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LEE Fuse ZA

The LEE Fuse ZA offers a robust anti-fuse memory solution, optimized for one-time programmable (OTP) applications such as system trimming and memory redundancy setups. This IP eliminates the need for additional manufacturing masks, offering a cost-effective path to integration within wide-ranging process nodes from 180nm down to advanced sub-10nm technologies. Its design, requiring only two or three metal layers, offers flexibility in using upper metal layers for further circuit integration, broadening its applicability across several advanced process technologies. This feature ensures that the LEE Fuse ZA can seamlessly integrate into complex semiconductor environments without the substantial costs usually associated with new IP incorporation. LEE Fuse ZA's support for extensive temperature ranges and long retention periods makes it a valuable resource for automotive standard products requiring severe condition reliability. Its track record spans various manufacturing statuses, making it a mature choice for industries looking for a dependable OTP solution capable of handling modern technology nodes efficiently.

Floadia Corporation
HHGrace, Samsung
10nm, 500nm
Embedded Memories, Flash Controller, NAND Flash
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LEE Flash G2

The LEE Flash G2 represents a cutting-edge evolution from its predecessor, offering enhanced memory capabilities and innovative features that cater to advanced electronic requirements. Built upon the proven architecture of the LEE Flash G1, the G2 version incorporates a clever switch transistor array, allowing for direct integration with logic circuits and enabling non-volatile SRAM functionalities. This design maintains a low power profile by not requiring high voltage for read operations and reduces layout complexity by eliminating isolation areas. This innovative flash solution is capable of supporting memory capacities up to several megabytes, making it ideal for applications that demand larger storage space while prioritizing energy efficiency. The G2 architecture also ensures compatibility with existing CMOS platforms without the need for changes in the SPICE model, facilitating the adoption of G2 technology within existing processes seamlessly. Other notable attributes include its suitability for high-temperature environments and long retention times, positioning it as a reliable option for automotive and industrial applications. The use of few additional masks further minimizes costs and accelerates production cycles, making G2 a cost-efficient choice for next-generation flash memory requirements.

Floadia Corporation
Embedded Memories, Flash Controller, NAND Flash, SDRAM Controller
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LEE Flash ZT

The LEE Flash ZT is engineered for automotive and industrial environments where high temperature and durability are critical. What sets the LEE Flash ZT apart is its zero additional mask requirement, significantly reducing manufacturing costs and enabling rapid integration within existing product lines. Its ability to maintain data retention over 20 years at 125°C demonstrates its reliability in demanding applications. Lee Flash ZT supports a wide range of use cases, making it ideal for precision trimming, parameter storage, and sensor integration in high-performance electronic devices. It leverages FN tunneling to achieve ultra-low power during program and erase cycles, which not only cuts down operation costs but also accelerates testing and final product release. Its compact form factor and compatibility with standard CMOS processes allow companies to re-use existing designs and IPs, eliminating the need for bespoke development efforts. This adaptability combined with its performance characteristics makes it a viable solution for manufacturers looking to enhance their product lines without incurring substantial initial investments or production delays.

Floadia Corporation
DDR, Embedded Memories, Flash Controller, NAND Flash
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