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LEE Flash G1 is an efficient, cost-effective embedded flash solution designed for applications requiring medium memory capacity up to several hundred kilobytes. Utilizing a simple SONOS architecture, it supports advanced temperature and quality standards crucial for automotive applications. It is designed to scale down to 40nm geometry, which allows it to fit seamlessly into the BCD process, making it suitable for high-performance environments. Its key features include high reliability, low power consumption in program and erase operations, and a streamlined testing process that significantly reduces chip costs. The IP does not affect the SPICE model of logic transistors, enabling users to preserve existing IP assets and designs. Its track record includes mass production in 130nm and availability in other advanced nodes, with a focus on automotive standards.
LEE Flash ZT is a zero additional mask multi-time programmable (MTP) IP ideal for automotive-grade trimming and parameter storage, particularly in sensor, power, and analog ICs. It is notable for requiring zero additional masks or process steps in its manufacturing, which leads to cost-efficient implementation and short process times. Designed to support process nodes from around 40nm, it achieves high-temperature operation and data retention, making it suitable for demanding automotive conditions. Its core architecture enables low power usage during program/erase cycles using FN tunneling technology, significantly reducing power consumption and short testing cycles to benefit overall chip cost efficiency. LEE Flash ZT has a proven track record in the automotive industry, highlighting its commitment to reliability and high-performance standards.
LEE Fuse ZA is an anti-fuse one-time programmable (OTP) IP that stands out for its applicability across a diverse range of process nodes, from 180nm to sub-10nm. This IP is well-suited for trimming applications that do not require subsequent reprogramming, such as memory redundancy. It eliminates the necessity for additional masks or steps in production and allows freedom of use in the remaining metal layers, ensuring ease of implementation even in advanced processes. Floadia's ZA fares excellently in high-temperature environments with long data retention spans, fulfilling rigorous automotive requirements with ease and cost efficiency. The IP is characterized by its flexibility with process compatibility and established track record of production success, particularly in DRAM technology and other logic processes.
LEE Flash G2 builds upon the success of the LEE Flash G1 by offering innovative features that enhance its utility and integration. This flash IP is optimal for larger memory capacities reaching up to several megabytes and is characterized by its non-volatile logic circuits using standard CMOS platforms. The hallmark of G2 is its VDD operation architecture, allowing seamless connection to standard logic circuits. It is particularly cost-effective because it eliminates the need for high voltage during read operations and minimizes layout isolation requirements. The G2 is thus capable of integrating with logic circuits like non-volatile SRAM, opening up new possibilities for chip design while preserving existing IP assets. It is noted for its low power usage in program and erase cycles, stringent automotive standards compliance, and reduced test and bake times, resulting in significant cost efficiencies.
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