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LEE Flash G1 is a highly cost-effective embedded Flash solution optimized for scalability down to a 40nm process, making it an excellent fit for medium memory capacity applications requiring up to several hundred kilobytes. Built on a simplified SONOS architecture, it supports automotive-grade temperature and quality standards. The G1 model allows seamless integration with standard CMOS processes, preserving existing IPs and macros without altering the SPICE model of logic transistors, thus avoiding costly redesigns. Its minimal mask requirement (2-3 additional masks) further ensures a cost-efficient setup, with reduced testing and bake times achieved through innovative power management techniques. Proven for long-term data retention in high-temperature conditions, LEE Flash G1 demonstrates unparalleled endurance and performance for demanding embedded applications.
Building on the G1 architecture, LEE Flash G2 introduces groundbreaking features that extend its capabilities beyond traditional Flash solutions. This IP offers seamless integration with logic circuits, enabling the creation of non-volatile SRAM configurations. The LEE Flash G2 operates without the need for high-voltage isolation, ensuring simplified layout designs and ultra-low power consumption. This makes it particularly valuable for applications demanding high-speed operations and substantial memory capacity, extending up to several megabytes. The G2's support for standard CMOS processes and its minimal impact on the existing PDK and Spice model enable designers to incorporate non-volatile functionalities within logic circuits effortlessly, paving the way for innovative circuit designs.
LEE Fuse ZA offers a one-time programmable, non-volatile memory solution well-suited for trimming and redundancy applications, especially when reprogramming is not necessary. This anti-fuse memory IP can be implemented without additional masks, significantly lowering production costs. Adaptable to a wide range of process nodes from 180nm down to sub-10nm, it supports advanced processes with minimal disruptions. LEE Fuse ZA's straightforward manufacturing requirements and robust adaptability make it an ideal choice for applications demanding long data retention at high temperatures, particularly in automotive-grade environments.
The LEE Flash ZT IP is designed to deliver efficient non-volatile memory solutions for sensor, power, and analog IC applications, particularly within the automotive sector. This IP is distinguished by its capability to operate at high temperatures, ensuring a 20-year data retention at 125°C without the need for additional manufacturing masks, thereby reducing production costs significantly. The ZT model utilizes a standard CMOS process, allowing for easy integration with existing design and IP infrastructures. This compatibility ensures a streamlined and cost-efficient transition to advanced memory solutions. With the FN tunneling technology, it achieves minimal power consumption during program and erase operations, supporting extensive programming cycles and offering the durability required for high-demand environments.
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