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Everspin delivers specialized MRAM solutions tailored for radiation-hard environments, vital for space applications. In space, higher radiation levels can disrupt conventional electronic storage, making Everspin's MRAM a crucial element for reliable operation and data integrity beyond Earth's atmosphere. As a leading provider of space-grade MRAM, Everspin enables data retention even in harsh cosmic conditions. The company's robust manufacturing capabilities in the U.S. support the production of 8-inch MRAM wafers, crucial for both standalone and embedded MRAM products. These products maintain integrity under extreme radiation levels, ensuring zero errors and mitigating potential data loss challenges. Everspin partners with key industry players to ensure their MRAM technologies meet stringent space and military requirements. Their success in providing RAD HARD solutions is supported by a roadmap emphasizing consistent availability and integration flexibility, which allows engineers to incorporate MRAM into military and aerospace systems confidently. This commitment to long-term product viability underscores Everspin's leadership in reliability-focused memory solutions.
Everspin's Parallel Interface MRAM offers a non-volatile memory solution compatible with SRAM, providing exceptional speed and endurance. This technology supports 8-bit and 16-bit configurations, tailored for seamless integration into existing systems due to its compatibility and straightforward interface. The MRAM products within this category boast quick access times of 35 to 45 nanoseconds, ensuring efficient data handling. Designed for robust performance, Everspin's Parallel Interface MRAM stores data without power intermittences for over 20 years, employing low-voltage inhibit circuitry to safeguard against data corruption during power loss. This resilience ensures data integrity throughout the device's extensive lifecycle. Everspin's commitment to compatibility and performance ensures that their Parallel Interface MRAM is ideal for sectors requiring fast access and reliable data retention, such as automotive, medical, and industrial control systems. By delivering high-speed communication with dependable non-volatility, these MRAM products facilitate effective and efficient system designs.
Everspin's Spin-transfer Torque MRAM (STT-MRAM) introduces a breakthrough in non-volatile memory by using spin-transfer torque technology to manipulate magnetic states at the device's junction. This innovative approach minimizes switching energy and improves scalability, enabling higher-density memory solutions that cater to a broad range of applications. The technology leverages a perpendicular magnetic tunnel junction (MTJ) for remarkable retention, density, and low power consumption. During write operations, a polarization current determines the direction of magnetic moments, translating into high and low resistance states that represent binary data. Everspin's STT-MRAM is engineered for performance, with products like their 1Gb device offering DDR4-like interface for data centers. These innovations empower data center and enterprise storage applications, providing significant enhancements in durability and data consistency. The MRAM also extends into industrial IoT applications, supporting high-speed communication and wide temperature range operations, making STT-MRAM a beneficial choice for advanced memory workloads and system designs demanding high resilience.
Toggle MRAM is Everspin's flagship non-volatile memory technology, characterized by its high density and reliability. It uses a single transistor and a magnetic tunnel junction (MTJ) cell structure to maintain data even without power for up to 20 years at standard temperatures. The unique design allows for fast data access and secure storage, making it ideal for "instant-on" and power loss protection applications across various electronic systems. The core structure of Toggle MRAM involves a one-transistor, one-MTJ cell that relies on magnetic field manipulation through a patented design to read and write data. This setup minimizes resistance disparity through electron spin-tunneling, featuring low resistance when the magnetic moments of key layers align parallelly and higher resistance when they are antiparallel. This creates a robust system that delivers SRAM speed with flash non-volatility. Everspin's Toggle MRAM is perfectly suited for applications across broad sectors such as aerospace, automotive, and Internet of Things (IoT). Its low latency and high endurance make it a preferred choice where data integrity is essential, offering a competitive edge in a world where reliable memory is critical to operational success.
The xSPI MRAM product family from Everspin offers a high-performance, non-volatile memory solution built on industrial STT MRAM technology. These products align with the latest JEDEC standards, providing expanded capabilities for the Industrial IoT and embedded systems through a sophisticated SPI-compatible interface. Featuring a broad operating range on a 1.8V power supply, xSPI MRAM devices facilitate rapid data operation, supporting both read and write functions up to 400MBps across multiple I/O configurations. This interface's high-speed functionality and minimal pin requirements make it an efficient choice for applications such as process control, automotive systems, and integrated IoT environments. Everspin's xSPI MRAM marks a transformative step in memory technology by replacing older devices like SRAM and NOR flash with more efficient and reliable alternatives. Its adaptability and performance serve a variety of industries requiring fast, reliable memory solutions for modern automation and control processes.
The Serial Peripheral Interface (SPI) MRAM from Everspin is a versatile memory solution designed for applications where fast data access and minimal pin count are requirements. With options like the MR10Q010 Quad SPI MRAM, this product line supports high-speed operations with efficient pin usage, offering light power consumption and a compact 16-pin package for ease of integration. This SPI MRAM excels in capacities ranging from 128Kb to 4Mb, with speeds up to 50MHz, enabling quick data transfer and retrieval which is ideal for storage buffers, embedded systems, and real-time data logging in RAID controllers. The Quad SPI configuration enhances this capability, achieving rates of 52MB/s, outperforming traditional parallel configurations. Designed to handle diverse applications, the Serial Peripheral Interface MRAM serves well in demanding environments like enterprise storage systems, serving data center needs, and supporting industrial automation processes where data integrity and speed are critical parameters for performance and reliability.
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