Is this your business? Claim it to manage your IP and profile
Everspin's xSPI solution caters to the demands of industrial IoT and embedded systems through innovative MRAM technology. Based on the latest JEDEC standard for non-volatile memory, the xSPI series offers multiple input/output compatibility, featuring a clock speed up to 200MHz, accommodating a wide range of high-speed, low-pin applications. This MRAM solution is particularly adept at replacing legacy memory formats such as SRAM and NVSRAM, offering superior performance and enhanced data storage stability. With support for both quad and octal interface configurations, densities range from 4Mb to 128Mb, with the memory performance offering operational speeds of up to 400MBps via its SPI-compatible bus. Developed to satisfy universal memory application requirements, the xSPI series is increasingly foundational to sophisticated systems across industrial control, gaming, and automotive sectors. Its robust architecture assures reliability, endurance, and compatibility with evolving industry standards, making it a pivotal component in modern electronics.
Everspin's Parallel Interface MRAM is engineered to offer SRAM-compatible performance with non-volatile benefits, featuring access times ranging from 35 to 45 nanoseconds. These devices provide substantial data integrity, ensuring retention for more than 20 years through low-voltage inhibit pathways that safeguard against erroneous writes during power anomalies. The Parallel Interface lineup encompasses both 8-bit and 16-bit formats, with memory densities from 256Kb to 32Mb, operating on standard 3.3V voltage. This product line achieves seamless data recovery and instantaneous access, making it particularly optimal for applications like industrial fabrics, avionics, and systems that demand steady data performance and rapid recovery post-power restarts. Engineered for endurance, these MRAM products can operate under intense memory demands without the risk of degradation. Everspin's technical advances allow the Parallel Interface series to function effectively amidst the most strenuous operating conditions, supporting long-lasting data storage and immediate accessibility.
Everspin's Toggle MRAM technology offers a dense and reliable memory solution, utilizing a single transistor, single magnetic tunnel junction (MTJ) memory cell. The unique Toggle MRAM cell design affords high reliability by ensuring data remains non-volatile for two decades, even under variable temperature conditions. The memory integrates seamlessly with existing silicon circuits, provides quick access similar to SRAM, and maintains data in the event of power loss like flash memory. The operational mechanism involves reading data by activating a pass transistor and comparing the MTJ's resistance to a reference. During write operations, the magnetic orientation of the MTJ is altered by intersecting magnetic fields from write lines, without affecting other cells. This magnetic-based storage approach achieves high-speed data access while protecting information integrity across different electronic applications. Toggle MRAM is particularly useful in systems requiring fast power cycles with non-volatile memory needs. Its endurance and reliability make it a favored option in many industrial and consumer electronics, paving the way for its deployment in various high-demand scenarios.
Everspin's MRAM products designed for radiation-hard markets bring resilience and reliability to environments facing high-radiation exposure such as aerospace and space missions. Conventional electronic memory storage uses electric charges; however, in radiation-prone settings, these can easily lead to data loss. Everspin's MRAM circumvents this issue by using magnetic storage, providing a more stable alternative. With proven effectiveness in space applications, Everspin MRAM offers unique robustness with zero hard errors at radiation levels exceeding 1 Mrad. Its U.S. manufacturing capability enables the company to supply both discrete and embedded MRAM that can withstand intense radiation, making it a trusted choice for aerospace and military applications. Additionally, the company provides a roadmap for evolving its MRAM solutions to maintain competitiveness and ensure long-term availability. By offering bespoke solutions, Everspin contributes significantly to equipping advanced systems with memory solutions impervious to radiation-induced failures.
Spin-transfer Torque MRAM (STT-MRAM) by Everspin introduces a paradigm shift in memory technology, efficiently combining high-speed performance with non-volatile data retention. By leveraging the spin of electrons to establish desired magnetic states, STT-MRAM drastically reduces the energy required for switching and offers scalability for higher density memory solutions. Everspin's STT-MRAM is crafted for diverse use cases, such as data center operations and industrial IoT applications. Its DDR-like interface simulates the behavior of DRAM while offering persistent data storage without the typical wear-and-tear associated with traditional memory solutions. This technology allows for high throughput, low latency operations with enduring reliability. With a focus on performance, durability, and capacity, STT-MRAM is suited for environments demanding robust data handling under extreme conditions. The technology further supports significant endurance improvement over prolonged use, making it a key enabler in memory stack optimization in modern computing frameworks.
The Serial Peripheral Interface MRAM from Everspin is designed for applications where rapid data storage and retrieval are paramount, yet with minimal pin usage. Designed with a streamlined 16-pin SOIC package, it allows for efficient space utilization making it perfect for embedded system applications with size constraints. The architecture enables quad and higher I/O paths that provide swift read and write capabilities, reaching transfer rates of up to 52MB per second, outperforming many parallel MRAM systems. This makes it particularly useful for RAID systems, server logs, and storage buffers where quick data access and refresh cycles are critically important. Engineers value this MRAM series for its low power consumption and high durability under varied operational conditions, making it a versatile solution for cutting-edge electronic applications requiring persistent memory. With SPI interfacing, these devices offer low pin count integration and reliable operations, ensuring robust performance with optional evaluation boards for prototyping and testing.
Join the world's most advanced semiconductor IP marketplace!
It's free, and you'll get all the tools you need to evaluate IP, download trial versions and datasheets, and manage your evaluation workflow!
To evaluate IP you need to be logged into a buyer profile. Select a profile below, or create a new buyer profile for your company.
