All IPs > Memory Controller & PHY > SRAM Controller
In the expansive world of semiconductor technology, SRAM Controller semiconductor IPs play a crucial role in managing static random access memory (SRAM). SRAM Controllers are critical components in a wide array of electronic systems due to their speed and efficiency in data access and storage operations. Whether in consumer electronics, telecommunications, or industrial applications, these controllers ensure that memory operations are optimized for maximum performance. At Silicon Hub, we offer an expansive selection of SRAM Controller IPs tailored to handle diverse computational needs.
SRAM Controllers are pivotal in connecting processors and SRAM memory blocks. They facilitate seamless communication between these components, ensuring that data is transferred quickly and efficiently. This capability is particularly crucial in applications that require real-time data processing and high-speed performance, such as gaming consoles, networking equipment, and advanced automotive systems. By integrating SRAM Controller IPs, designers can achieve reduced latency and enhanced system throughput, which are essential for maintaining competitiveness in today’s tech-driven market.
Apart from the impressive performance features, these semiconductor IP solutions are also designed with flexibility and scalability in mind. Users can select IPs that offer customizable features to cater to specific application requirements, such as varying memory sizes and bandwidths. This adaptability makes SRAM Controller IPs suitable for cutting-edge applications, including artificial intelligence (AI) devices, IoT technologies, and mobile computing. Furthermore, these controllers often come equipped with error correction capabilities, adding another layer of reliability to critical systems.
At Silicon Hub, our SRAM Controller semiconductor IP portfolio is carefully curated to meet the highest industry standards. Whether you are designing compact systems for power-sensitive environments or high-end servers requiring massive bandwidth, our selection offers robust and versatile solutions. Explore our SRAM Controller IPs to find the perfect match for your project requirements and ensure your next innovation harnesses the full potential of efficient and effective memory management.
The YouONFI product from Brite Semiconductor is tailored for NAND Flash applications, offering a high-speed PHY solution that is compliant with ONFI 1 through 5 standards. This versatility supports both synchronous and toggle DDR NAND modes, with data rates reaching up to 2400Mbps. Flexibility is a key component of YouONFI, catering to varying power supplies at 1.2V, 1.8V, and 3.3V, thus expanding its application scope across different technology nodes and system requirements. The IP is optimized for seamless integration into high-performance memory subsystems, ensuring efficient data management and storage. Commanded by a fully digital DLL and accompanying APB interfaces for storage management, YouONFI facilitates exceptional data throughput and reliability in embedded systems. This makes it particularly compelling for use in consumer electronics, industrial storage solutions, and any application relying on rapid access to flash storage components.
The AXI4 DMA Controller by Digital Blocks is tailored for high data throughput in varied data set sizes across multiple channels, ranging from a single up to 16 in standard releases. It includes features such as independent read and write controllers for each channel and scatter-gather linked-list management for data transfers, ensuring efficient handling of memory and peripheral data. This controller supports customizable interfaces like AMBA AXI and offers numerous data width options, which aid in optimizing performance and minimizing hardware footprints. User configurable parameters and a robust test suite make this DMA controller adaptable and easy to integrate into diverse system architectures.
The Secure OTP (One-Time Programmable) solution by PUFsecurity elevates standard OTP technology by integrating anti-fuse memory and robust encryption techniques, ensuring the high-level protection of sensitive data. This sophisticated approach allows for secure data storage and management, even under duress from advanced attack methodologies. Secure OTP transforms how critical data like encryption keys and configuration states are stored, enabling devices to maintain data integrity during storage and transit. By encapsulating both physical macro implementations and digital RTL designs with intuitive control, Secure OTP allows seamless integration into a host of applications while safeguarding against unauthorized data extraction. The integration of diverse interface protocols makes Secure OTP adaptable to a wide range of industrial requirements. It stands as a robust defensive measure in the face of modern threats, offering reliability in an era where secure data storage solutions are more important than ever.
The sensors developed by Analog Bits are sophisticated components designed for the precise monitoring and management of chip conditions such as PVT (process, voltage, temperature) variability and power supply levels. These sensors are embedded into semiconductor devices to provide accurate data that aids in optimizing system performance and energy efficiency. Analog Bits offers a comprehensive sensor IP portfolio that includes high-precision temperature sensors and power supply droop detectors. These sensors are particularly adept at detecting voltage fluctuations, ensuring that chips operate within optimal parameters while safeguarding against thermal and power-related failures. Designed with minimal footprint and low power metrics, these sensors are fully integrated into the chip substrate, streamlining the monitoring process. This integration is crucial for maintaining the reliability and longevity of semiconductor products, making them an essential component in industries ranging from consumer electronics to advanced computing systems.
CodaCache provides a comprehensive solution for enhancing SoC performance through advanced caching techniques, optimizing data access, and improving power efficiency. This last-level cache complements NoC applications by minimizing memory latency and power consumption. Its configurable design offers flexible memory organization, supporting diverse caching requirements and real-time processing. CodaCache is designed to seamlessly integrate with existing SoC infrastructures, accelerating development timelines and enhancing data reusability. It aids in reducing layout congestion and timing closure issues, resulting in better resource management and performance optimization across a range of electronic design applications.
SRAM, or Static Random-Access Memory, is a critical component in semiconductor design, known for its high-speed data access and reliability. DXCorr’s SRAM solutions are built to maximize performance in a multitude of applications, offering significant advantages in power efficiency and operational speed. These memory arrays are adept at providing the rapid access necessary for high-performance computing environments, paving the way for enhanced data processing and storage capabilities. The flexibility and customizable nature of DXCorr’s SRAM offer clients the ability to tailor capabilities to specific application needs. This makes it an ideal choice for applications requiring low latency and high throughput, such as cache memory in processors and performance-critical applications in telecommunications. Its distinct architecture allows for robust integration into various systems, providing the foundational memory support essential for advanced computing solutions. Designed with leading-edge technology, DXCorr’s SRAM products not only optimize current computing requirements but also anticipate the needs of future technologies. The focus on efficiency ensures reduced power consumption, critical for battery-dependent applications and eco-friendly computing initiatives. SRAM's modular design also facilitates easy scalability, making it a preferred choice for developers aiming to expand functionality and performance consistently.
The YouDDR solution offered by Brite Semiconductor is a comprehensive sub-system that includes a DDR controller, PHY, and I/O. This solution is meticulously crafted to support various DDR technologies like LPDDR2, DDR3, LPDDR3, DDR4, and LPDDR4/4x, with data transfer rates ranging from 667Mbps to 4266Mbps. YouDDR is equipped with advanced dynamic self-calibration logic (DSCL) and dynamic adaptive bit calibration (DABC) technologies. These advancements allow for automatic adjustment to variations such as process, voltage, and temperature (PVT) changes, ensuring robust performance across different conditions. The system also supports training sequences for both read and write operations, ensuring optimized signal integrity and data accuracy. Brite's YouDDR technology guarantees high speed and low power consumption, making it ideal for applications requiring fast memory access and energy efficiency. Its design is highly flexible, supporting multiple configuration options to meet diverse application needs, including different interface types like AXI and AHB. These features make it particularly well-suited for use in high-performance computing systems, consumer electronics, and network systems where quick data retrieval is paramount. The YouDDR IP provides significant advantages over competing products due to its small area and power-efficient design. It also incorporates a comprehensive set of verification tools and support for seamless integration into larger system designs. This makes it a valuable asset for designers seeking a reliable and efficient memory subsystem with proven performance in varied industry applications.
Toggle MRAM Technology from Everspin Technologies is a memory solution that melds non-volatility with the high-speed performance of RAM, enabling devices to have an "always-on" capability. This MRAM utilizes a single transistor and a magnetic tunnel junction (MTJ) to ensure high-density storage with excellent reliability and long-term data retention of up to 20 years even under significant thermal stress. This technology is designed to blend seamlessly into existing systems, delivering the speed of SRAM with the durability of non-volatile Flash memory in a single module. Its architecture fortifies data against power interruptions by automatically safeguarding it during voltage dips, making it ideal for essential applications across various sectors. The architecture of Toggle MRAM involves the use of magnetism in electrons to store information, which eliminates the typical wear-out associated with electrical charge memory. The magnetic properties grant it swift read/write capability, combined with robustness and longevity, making it particularly suitable for use in industrial IoT and other demanding environments. This MRAM uses a unique design consisting of a fixed magnetic layer opposite to a free one, separated by a thin dielectric, which helps maintain consistent data integrity. Toggle MRAM is especially advantageous in scenarios where data reliability and quick access times are critical, such as in industrial automation, telecommunications, and aerospace technologies. Its resistance-based read mechanism ensures efficient data retrieval, while its magnetic field writing technique enhances its performance by targeting specific memory locations without disturbing surrounding data. This makes it highly scalable and adaptable for various technological needs, thereby positioning it as a dynamically integrative component in modern architectures.
I-fuse® technology leads the way in non-volatile memory with a non-explosive programming method that avoids thermal disruptions commonly associated with other memory systems. It reduces the footprint by a factor of ten compared to eFuse and can be implemented without extra masks or process steps across multiple foundries. With low programming voltage capabilities (1.1V/1.8V) and high data security features, it provides reliability tested up to 300°C, making it suitable for harsh environmental conditions, especially in automotive applications.
NuRAM Low Power Memory represents a breakthrough in memory technology, utilizing the reliable MRAM architecture to deliver fast access times while significantly reducing leakage power. This IP is a compelling choice for system designs looking to upgrade from traditional SRAM or nvRAM, as well as embedded Flash. Its innovative design allows for substantial size reduction, enabling more efficient memory footprints, which translates into reduced power needs and potentially minimal DDR memory access. Furthermore, the memory can be completely powered down without losing stored data, offering impressive power and latency optimizations that are critical for modern digital systems.
The iniHDLC is designed as a flexible High-Level Data Link Controller (HDLC), encompassing both Receiver and Transmitter units for comprehensive data communication processes. Crafted to handle essential HDLC protocols like Q.921, Q.922, and LAPB, this IP offers full HDLC support with a structured VHDL implementation ideal for FPGA and ASIC platforms. The HDLC cores provide critical functionalities such as interframe flag handling, CRC-16 Frame Check Sequence (FCS) pattern management, and bit stuffing mechanisms. The transparent mode implementation permits tailored use across varied communication systems and networking environments. It integrates effortlessly into custom buffer setups, such as FIFO and DMA interfaces, thanks to its flexible I/O configurations. Engineered for broad protocol compatibility and ease of system integration, the iniHDLC IP is considered an invaluable asset for networked communication systems handling high data volumes and requiring robust error handling. Its meticulous design ensures system reliability and adaptability to diverse communication protocols, making it integral for advanced telecommunications applications.
The SD UHSII interface by Silicon Library accelerates the read and write speeds of SD cards, vital for applications demanding swift data access. Designed with the modern user in mind, this interface supports the UHS-II standard, significantly enhancing data interaction speeds for modern consumer electronics. Tailored for devices such as cameras and mobile phones, the SD UHSII ensures rapid photo and video transfers, which is critical for high-definition filming and photography. Its design incorporates a dual-row pin interface, doubling the speed of data exchange compared to its predecessors. The SD UHSII is pivotal in applications necessitating high-speed data caching and retrieval. From gaming consoles to digital cameras, its robust design ensures compatibility and optimal performance in high-data throughput environments, maintaining data integrity and reducing latency.
SmartMem Subsystem IP enhances ease of use and scalability by optimizing power, performance, and endurance across a variety of memory types, including NuRAM and other MRAM technologies, as well as RRAM, PCRAM, and embedded Flash. This versatile memory subsystem is fully synthesizable and configurable, making it an excellent choice for SOC designs that require customizable compute-in-memory solutions. SmartMem supports high performance in demanding environments, providing essential features for adaptive memory management that greatly improve the deployed memory's operational efficiency and effectiveness. Its value lies in its ability to improve the utility of existing memory technologies while offering a robust framework for new developments.
Everspin's Parallel Interface MRAM is designed to offer a combination of high-speed performance and robust data storage capabilities. Compatible with SRAM, this MRAM supports both 8-bit and 16-bit parallel interfaces, providing data access times of 35 to 45 nanoseconds and handling an endurance beyond conventional limitations. The MRAM architecture ensures data persistence, protecting information against power failure scenarios via integrated low-voltage inhibit circuits that suspend writing operations if voltages go beyond specification limits. Available in multiple configurations ranging from 256Kb to 32Mb, the Parallel Interface MRAM is engineered to meet the demands of various applications needing fast data access and retention, especially in environments where data integrity is paramount. Its comprehensive support for a range of supply voltages (typically around 3.3 volts) and flexible timing specifications allow it to be integrated into diverse system architectures efficiently, catering to the needs of industries like automotive, aerospace, and data-driven infrastructure. This MRAM variant is particularly beneficial for systems that require dependable performance in less-than-ideal conditions — including high-frequency data logging in avionics and harsh automotive environments. The MRAM's quick response times and resistance to electrical fluctuations make it indispensable in maximizing operational reliability, helping to streamline system designs by removing the necessity of additional energy storage or backup components traditionally associated with data safeguarding.
PermSRAM is a sophisticated nonvolatile memory macro designed to operate on standard CMOS platforms, spanning process nodes from 180nm to 28nm and beyond. It supports a wide variety of nonvolatile memory functions, including a one-time programmable ROM and a pseudo multi-time PROM with exceptional multi-page configuration capabilities. The memory sizes range from 64 bits to 512Kbits, making it highly versatile for various applications. It features a non-rewritable hardware safety lock, specifically for secure code storage, ensuring data integrity and security.\n\nPermSRAM's robust design supports security code storage, program storage, and analog trimming, among other applications. It also provides features like gamma correction and chip ID management, making it suitable for complex tasks. The memory benefits from a compact silicon area, being tamper-resistant due to its invisible charge trap mechanism. Its built-in self-test circuits ensure seamless testing environments and all bits can be tested using conventional test equipment. Furthermore, it offers automotive-grade data retention capabilities, functioning optimally under high temperatures.\n\nCustomers benefit from its cost-efficiency, as it does not require a charge pump for read operations, which simplifies the design and lowers costs. The product's compatibility with conventional test strategies and its suitability for high-temperature environments make it an ideal choice for automotive applications and other demanding industrial uses.
TwinBit Gen-1 by NSCore is an innovative non-volatile memory solution that leverages electrical erase operations. It offers a memory density ranging from a minimum of 64 bits to a maximum of 512K bits, engineered to perform multiple program/erase cycles without additional masking layers, ensuring cost-effectiveness. The design is compatible with CMOS logic processes, supporting process nodes from 180nm to 55nm, which allows seamless integration into advanced technological environments. Its security features make it suitable for storing security keys and analog trimming data required for specific applications.\n\nThis memory technology emphasizes high endurance, with the ability to endure more than 10,000 program and erase cycles. TwinBit Gen-1’s design mandates no extra masks or process alterations, incorporating a true logic-based approach for non-volatile memory development. It supports a broad spectrum of applications including IoT devices, microcontrollers, field-programmable gate arrays (FPGAs), and application-specific standard products with re-writable firmware.\n\nIn terms of reliability, TwinBit Gen-1 is capable of automotive-grade data retention according to AEC-Q100 standards, making it ideal for applications that require low-voltage and low-power operation. Its built-in testing mechanisms facilitate stress-free verification, ensuring that it only requires conventional test equipment. The memory's durability, combined with cost-efficient production, positions it as an optimal choice for specialized sectors needing flexible memory solutions.
The NVMe Streamer is a robust IP core designed to enhance data storage performance by leveraging the capabilities of Non-Volatile Memory Express (NVMe) protocols. Integrated seamlessly into FPGAs, this core provides full accelerator NVMe host subsystem functionalities, ideally suited for Xilinx Zynq Ultrascale+ MPSoC and RFSoC devices. The NVMe Streamer offers complete programmability, allowing for CPU-less operations that maximize data throughput while keeping the processing system unobtrusive. This subsystem efficiently utilizes Xilinx GTH and GTY Multi-Gigabit Transceivers along with PCIe Hard IP Cores, making it fully compatible with PCIe Gen 1 through Gen 4 speeds. It supports various lane configurations to ensure optimal scalability and adaptability for high-speed data applications. Users benefit from full acceleration features, integrating host controller capabilities that simplify the setup and configuration of NVMe IO commands, significantly increasing performance and system responsiveness. The NVMe Streamer's applications are extensive, covering high-speed data acquisition and seamless sensor data recording. It is particularly advantageous for automotive and aerospace data logging, where reliability and efficiency are paramount. Its design enables lossless and accurate recording and streaming from solid-state drives (SSDs), offering advanced storage protocol offloading for modern high-bandwidth demands.
EverOn offers a silicon-proven Single Port Ultra Low Voltage (ULV) SRAM solution, providing up to 80% dynamic power savings and up to 75% static power reductions when operated within its voltage range of 0.6V to 1.21V. This high-performing SRAM meets the needs of cutting-edge applications, with cycle times as low as 20MHz at its minimum voltage, scaling up to over 300MHz. Its innovation lies in achieving remarkable power reductions while maintaining flexibility for applications in wearables and IoT, ensuring that devices remain functional across a wide range of power conditions.
CrossBar's ReRAM Memory is a pioneering memory solution that significantly enhances data storage capabilities for modern applications. Employing a minimalist three-layer structure, ReRAM Memory utilizes a silicon-based switching medium between two electrodes to facilitate resistive switching. This setup results in a highly stable memory cell that operates across varied temperatures and conditions. ReRAM Memory's ability to scale vertically in 3D allows it to deliver extensive terabyte-level storage on a single chip, alongside providing incredible endurance and rapid read/write capabilities. The technology's compatibility with standard CMOS processes facilitates easy integration into existing manufacturing setups, making it highly versatile for a wide range of applications, from IoT devices to data centers, and more. Notably, ReRAM Memory's unique design addresses some critical challenges facing conventional memory technologies. By reducing energy consumption to a mere 1/20th of traditional memory solutions, it delivers unmatched performance, sustaining up to 1000 times more write cycles and operating reliably with significant endurance and retention capabilities. Furthermore, its potential to be combined directly with logic circuits in a foundry augments the memory performance significantly while optimizing space and power requirements. Applications of ReRAM Memory spread across various domains such as artificial intelligence, mobile computing, and secure computing. Its benefits are clearly outlined in its secure features, where the memory is deployed for developing advanced applications involving secure cryptographic keys and tamper-resistant solutions. This makes ReRAM Memory an ideal choice for scenarios demanding high security and reliability, paving the way for future innovations in the semiconductor industry. CrossBar's ReRAM Memory showcases a perfect blend of cutting-edge design and practical implementation potential, enabling the semiconductor field to explore new possibilities in data processing and storage technologies. As digital landscapes continue to evolve, CrossBar's ReRAM offers lifecycle improvements and operational efficiencies that align with the industry's growing needs for high-density, reliable, and energy-efficient memory technologies.
Magnetoresistive Random-Access Memory (MRAM) is a cutting-edge memory technology widely acclaimed for its stability and endurance. DXCorr has engineered MRAM solutions that deliver non-volatility and fast write and read speeds, positioning it as a reliable memory choice for diverse applications ranging from consumer electronics to high-performance computing. MRAM technology is distinguished by its ability to offer higher endurance compared to traditional RAMs, mainly due to its robust magnetic storage elements. This characteristic extends the memory's lifespan and efficiency in data retention, minimizing data loss and ensuring reliable performance across various operating environments. As computing demands scale, MRAM serves as a steadfast component facilitating seamless data management and retrieval processes. Incorporating DXCorr’s MRAM into systems not only bolsters data security but also enhances energy efficiency, a crucial factor in the design of sustainable computing solutions. Its incorporation into semiconductor designs helps in achieving superior power-performance metrics while maintaining robustness, making it a pivotal choice for modern memory-intensive applications.
Tower Semiconductor's Non-Volatile Memory Solutions offer advanced memory technology for a wide range of applications. This platform specializes in memory retention without power, crucial for devices that require data persistence. The NVM solutions encompass a variety of memory types, including EEPROM and Flash, enabling reliable data storage across sectors. These solutions are characterized by high reliability and endurance, making them suitable for industrial, consumer, and automotive applications. The ability to sustain numerous write/erase cycles without degradation ensures longevity and durability, critical in environments where stable memory performance is essential. The NVM Technology from Tower Semiconductor is designed to integrate easily with various logic processes, fostering efficient semiconductor design. This capability allows for the creation of optimized systems that enhance performance while minimizing energy consumption, aligning with industry demands for greener, more sustainable technologies.
Designed to replace traditional laser fuses, I-fuse® Replaser provides comprehensive benefits in terms of programming and operational reliability. Its operation is characterized by low power requirements for both programming and reading, coupled with rapid response time, ensuring it meets rigorous industry standards like the AEC-Q100 Grade 0. It functions well in environments spanning -40°C to 150°C, further broadening its applicability in tough conditions. With attributes like low program/read voltage and soft programming features for pre-testing, it enables flexible integration into designs requiring efficient space use.
TwinBit Gen-2 represents the next evolution of non-volatile memory from NSCore, designed for advanced semiconductor processes from 40nm down to 22nm. This generation preserves the TwinBit legacy of not requiring additional masks or process steps, thus maintaining cost efficiency for large-scale applications. It incorporates a novel Pch Schottky Non-Volatile Memory Cell structure, which enables ultra-low-power operations essential for today’s energy-conscious applications.\n\nThe Pch Schottky NVM cell is engineered for minimal power consumption, helping clients design products that are power-efficient while providing reliable memory solutions. TwinBit Gen-2 supports a range of sophisticated applications, including hot carrier injection control via cell biasing, suitable for program and erase operations. Enhancements in hot-hole generation distribution during programming, and hot-electron distribution during erasing, contribute to its improved performance metrics.\n\nThe IP is suitable for high-performance applications requiring a combination of low power consumption and high-density memory solutions. Its design favors applications in modern consumer electronics and automotive industries that require state-of-the-art memory solutions to manage increasingly complex data processing needs efficiently and reliably.
The Serial Peripheral Interface (SPI) MRAM from Everspin features rapid data transfer using a minimalistic pin configuration, optimized for efficient use in space-constrained applications. This MRAM is engineered for applications where quick storage and retrieval are critical, such as in advanced RAID controllers and state-of-the-art server system logs. It operates with speed and efficiency, delivering data transfer rates up to 52MB/s using a quad SPI configuration, surpassing traditional parallel interfaces in performance and flexibility. The MR10Q010, Quad SPI MRAM, epitomizes high-speed access facilitated by a 16-pin small-form-factor package, making it an excellent choice for embedded systems and storage buffers where space and power efficiency are of paramount importance. Its ability to function under a 3.3V power supply, with an adaptive 1.8V I/O operation, underscores its versatility across different system voltages and configurations, making it a go-to solution for next-generation electronics. This versatile MRAM's suitability spans various realms, providing reliable data storage and quick access in systems requiring intense data throughput under constraints of space and energy. It is tailored for applications where the impact of non-volatility and low latency can substantially elevate system performance, thereby serving crucial roles in embedded computing, storage applications, and flexible data solutions across platforms.
The P-Series MRAM-DDR3 and MRAM-DDR4 Solution offers an advanced memory solution that combines the benefits of MRAM technology with DDR3 and DDR4 interfaces. This product features sophisticated timing control mechanisms, allowing adaptability to various MRAM configurations without compromising on performance. It includes support for heterogeneous modes and improved hardware initialization features. Designed to deliver high endurance and persistence, this solution meets rigorous memory requirements while providing flexibility in power and size considerations, making it well-suited for a broad range of applications.
The I-fuse® S3 further innovates on the core I-fuse platform with an architecture that allows for significant scaling and compacting capabilities. It shines when the memory density required is below 4Kbits, offering a top-notch solution for minimal size applications. Engineered to be compatible with several foundries without needing additional processing steps, it maintains its low programming voltage and silicon-proven reliability, achieving AEC-Q100 Grade 0. Its ability to adapt to various foundries and process nodes ensures a broad applicability, from consumer electronics to automotive systems.
Ternary Content-Addressable Memory (TCAM) is an advanced memory solution, renowned for its capability to perform high-speed searches. The TCAM offerings by DXCorr are designed to expedite search operations by storing data in a manner that allows quick retrieval based on binary queries. This makes it a vital component in applications demanding rapid data access such as in network routers and database systems. As a specialized form of CAM that can store tri-state data – 0, 1, or X (don't care) – DXCorr’s TCAM enhances search speeds without compromising on data accuracy, an essential factor for optimizing functions in data networks and telecommunication systems. Such capabilities ensure that DXCorr’s TCAM excels in increasing the efficiency of network routing processes and data packet management within advanced computing systems. DXCorr's TCAM is built to adapt to varying technical specifications and challenges inherent in modern computing environments. It is engineered to meet high-performance criteria and is integral in creating systems that require extensive data sorting and real-time decision-making capabilities, reinforcing its role as a critical enabler for network and data management technologies.
Designed for managing data in CompactFlash and Parallel ATA environments, the F9 CF PATA Controller offers high reliability and endurance for industrial applications. This controller employs advanced flash management techniques like hyReliability™ for wear leveling and power fail management, ensuring robustness in demanding environments. The F9 is equipped with a flexible BCH ECC engine capable of 96-Bit/1K corrections, delivering support for all major flash memory types while maintaining long-term availability. Its design includes a 32-bit RISC core which enhances instruction handling for flash operations, optimizing overall performance. With a comprehensive set of features such as AES encryption support and the ability to include custom firmware enhancements, the F9 enables customization to specific customer needs. This makes it a versatile choice for legacy systems requiring enhanced data processing and storage resilience.
Attopsemi's OTP IP is designed to be a high-performance, reliable solution for embedded memory, tackling the needs of modern electronic designs with high reliability and minimal footprint requirements. The technology integrates seamlessly into a wide range of devices, from consumer electronics to sophisticated automotive applications, supporting extensive testability and delivering high-speed operations. Its architecture is frequently updated to meet evolving standards, ensuring robust protection against environmental stresses and extending product life spans.
The BCH Encoder and Decoder from IPrium is optimized for use with NAND Flash memory, providing reliable error correction capabilities. This IP core is designed to handle the complexities of high-speed data transmission, ensuring data integrity through its robust error-detecting and correcting features. Its implementation supports different configurations depending on the memory density and performance requirements, making it a versatile choice for a wide range of applications. Engineered to maximize system reliability, the BCH Encoder and Decoder is equipped to manage error correction in challenging environments. It employs a sophisticated algorithm to detect errors in data blocks and perform necessary corrections without significantly impacting data throughput. The IP core's adaptability allows it to be tailored for specific applications, offering customizability to suit unique operational needs. This IP core is also beneficial in enhancing the lifespan of NAND Flash by mitigating bit errors that can accumulate during continuous usage. By incorporating IPrium's BCH Encoder and Decoder, manufacturers can improve the durability and reliability of their memory products, leading to enhanced user confidence and product longevity. Its robust error correction capability makes it an indispensable component in memory-intensive and data-critical applications.
The Embedded ReRAM technology by Weebit Nano is an innovative non-volatile memory solution tailored for embedding into various electronic systems. Known for its fast speed and low power requirements, this ReRAM module is seamlessly integrable into a wide range of applications, from IoT devices to automotive electronics. Its compact design allows for high-density memory storage, making it an excellent choice for devices where space and power efficiency are critical. This technology is built to withstand extreme conditions, offering reliable performance for automotive and aerospace domains where high temperatures and environmental variability are a given. With its capability to maintain data integrity without a power source, the embedded ReRAM module suits applications requiring persistent data storage. With Weebit's focus on scalability, the embedded ReRAM can be customized to meet specific design requirements across various semiconductor processes, ensuring that manufacturers can leverage this technology across different platforms. Its modular nature and solid performance profile make it a strategic tool for creating next-gen smart devices.
PowerMiser is engineered to provide low power SRAM solutions for devices needing long battery life and minimal operational power draw. Realized on nodes like 28nm FDSOI and 22nm ULL BULK CMOS, it offers dynamic power savings exceeding 50% and leakage power savings from 21% to 38%. The product supports capacities up to 576Kbits with advanced power saving modes, including retentive light sleep for quick wake-up and deep sleep for maximum leakage savings. Its "Bit Line Voltage Control" technology ensures there are no performance trade-offs, even at lower operating voltages, making PowerMiser ideal for modern edge-AI technologies.
The URS500 Solvent Recycler is ideal for paint and body shops, capable of recycling 5 gallons of solvent per batch. Utilizing advanced vaporization and condensation processes, it optimizes solvent use with precision via a solid-state microprocessor. With features like automatic shut-off and a high-efficiency condenser, this model assures reliable and consistent operations. The 304-grade stainless steel build meets stringent safety standards, offering durability and compliance.
HermesCORE HBM3 Controller IP is crafted for applications that necessitate high memory bandwidth and low latency, such as graphics and data-heavy computing. Fully compliant with JEDEC standards, it handles complex memory management tasks, ensuring efficient operation and high data throughput in advanced computing environments.
MidasCORE HBM3 PHY IP is tailored for high-performance computing and networking applications that demand substantial memory bandwidth and low latency. This PHY supports High-Bandwidth Memory (HBM3), integrating comprehensive power efficiency features and high density, accommodating the rigorous requirements of graphics and communication systems. As part of a complete HBM3 subsystem, it optimizes memory throughput and efficiency.
Atria Logic offers a high-speed, high-performance memory controller combined with a PHY that adheres to QDR IV XP specifications, enabling operation at impressive speeds of up to 800MHz. Designed for Stratix V FPGAs, this IP core supports two bidirectional ports and features advanced de-skew training sequences and per-bit calibration. It operates by handling rate conversions and intricate reset configurations, ensuring seamless and efficient data processing tasks. This makes it ideal for applications in networking and communication that demand high bandwidth and low latency.
The URS600 Solvent Recycler shares many features with the URS500 but is designed for a higher voltage input of 220-240V. It efficiently recycles common solvents such as paint thinner and acetone, significantly reducing environmental footprints. With a durable stainless steel construction, this model ensures long-lasting performance and meets CE safety standards, making it a sound investment for businesses aiming to improve sustainability and cost efficiency.
The URS900 Solvent Recycler is designed for high-efficiency solvent recycling, managing up to 6.6 gallons per batch. It boasts a robust 220-240V heater and a precise microprocessor for streamlined operations. With options for copper or stainless steel condensers and a digital interface for easy control, this model delivers both performance and reliability. It supports sustainable practices by drastically cutting down solvent waste in professional environments.
The DB100N Solvent Recycling System is designed to efficiently manage large batches of solvent, recycling 20 gallons per cycle. It leverages vaporization and condensation for effective distillation, managing typical solvents like acetone and paint thinners. This unit enhances workflow efficiency through continuous monitoring and high-capacity operations.
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