All IPs > Analog & Mixed Signal > Amplifier
In the realm of analog and mixed signal applications, amplifier semiconductor IPs are crucial components that play a fundamental role. They are designed to amplify or boost the power, voltage, or current of a signal, ensuring that electronic devices perform efficiently and reliably. At Silicon Hub, our selection of amplifier semiconductor IPs caters to a variety of needs, from simple low-power audio amplifiers to complex RF power amplifiers used in wireless communication systems.
Amplifiers are a key part of many electronic products, including audio equipment, telecommunications infrastructure, and medical devices. For instance, in the audio sector, amplifiers enhance sound quality by increasing the amplitude of signals, thereby enabling concert-level sound in consumer devices. Similarly, in the telecom industry, RF amplifiers are vital for extending the range and clarity of wireless transmissions.
Our catalog at Silicon Hub includes a wide range of amplifier IPs tailored for different specifications and applications. These IPs are designed to meet stringent requirements for linearity, efficiency, and noise performance. Whether designing consumer electronics or sophisticated industrial systems, our amplifier solutions ensure optimal performance and scalability.
Choosing the right amplifier semiconductor IP can dramatically affect the overall performance of an electronic system. As the demand for more efficient and powerful electronic devices continues to grow, our amplifier IPs provide the necessary advancements to meet evolving technological challenges. Explore our broad selection to find the perfect match for your project requirements, and leverage Silicon Hub's expertise in delivering cutting-edge semiconductor solutions.
The KL730 AI SoC is equipped with a state-of-the-art third-generation reconfigurable NPU architecture, delivering up to 8 TOPS of computational power. This innovative architecture enhances computational efficiency, particularly with the latest CNN networks and transformer applications, while reducing DDR bandwidth demands. The KL730 excels in video processing, offering support for 4K 60FPS output and boasts capabilities like noise reduction, wide dynamic range, and low-light imaging. It is ideal for applications such as intelligent security, autonomous driving, and video conferencing.
Vantablack S-VIS Space Coating is a pioneering solution designed for the suppression of stray light in space applications. This coating excels in optical performance by absorbing nearly all incident light, thereby providing unmatched minimization of reflection. As a result, it enhances the calibration of optical instruments used in space, critical for precise astronomical measurements and other space exploration applications. Vantablack S-VIS is formulated to withstand the harsh conditions of space, maintaining its superior blackening properties without degradation even in extreme environments. The use of Vantablack S-VIS offers significant advantages to scientific missions by improving the accuracy and reliability of data collected through telescopes and other space-borne instruments. Unlike traditional paints and coatings, Vantablack S-VIS can be applied to complex optical structures without affecting their functionality. This makes it an essential component in designing systems that operate in high-precision, and high-sensitivity environments where error margins are minimal. In addition to its functional applications, the aesthetic appeal of Vantablack S-VIS is unmatched, creating a breathtaking void of light when applied. This aspect has also found applications in art and design, where the darkest black available transforms ordinary surfaces into seemingly infinite voids. As such, Vantablack S-VIS serves both scientific and creative endeavors by harnessing its unique optical properties to transform how surfaces are seen and used in various industries.
Certus Semiconductor's Analog I/O solutions focus on delivering ultra-low capacitance and extreme ESD protection, making them ideal for sophisticated applications that demand high reliability. These solutions are adept for high-speed SerDes and RF communications thanks to their ability to manage impedance matching and maintain strong signal integrity. The analog libraries include comprehensive solutions that accommodate ESD and power clamps within macro cells, optimizing performance while minimizing impact on overall chip design. Advanced tolerance levels for signal swings including those below ground are supported, ensuring robust performance in a variety of operational conditions. Specialized macro cells cater to frequency ranges above 30 GHz and data rates surpassing 112 Gbps, demonstrating their capability to handle demanding technical requirements. Certus's expertise in analog design translates into solutions adept at withstanding levels of stress far beyond industry standard HBM and CDM requirements. This resilience, coupled with high-temperature tolerance and radiation-hardening, provides a safety net against diverse environmental challenges.
The BG-1V2-U is an ultra-low-power bandgap reference circuit crafted for high precision voltage regulation. Designed using UMC's 0.13 μm technology node, this circuit provides a stable 1.20 V reference voltage with virtually no quiescent current draw, ensuring minimal power usage. With a perfectly compact size, it is optimized for use in a diverse range of electronic systems that demand reliable performance. Enhanced stability is a core feature of the BG-1V2-U, ensuring that the reference voltage remains unaffected by temperature variations and processing disparities. This bandgap reference strikes a fine balance between size, power consumption, and performance, making it adept for integration in modern electronics where energy efficiency is key. The BG-1V2-U serves as an excellent choice for battery-operated devices, providing consistent reference voltages without the hefty power costs associated with conventional designs. Its robust construction and precise output make it a valuable component in tightly constrained environments.
Analog Circuit Works' Low Noise Amplifiers (LNAs) are crafted to reach near theoretical limits of noise performance and power efficiency. These amplifiers are crucial in applications where maintaining signal integrity is essential. With proven adaptability across different processes and applications, these LNAs are well-suited to meet various demands. The company's LNAs leverage advanced design techniques to minimize the noise figure, which is crucial for amplifying weak signals without introducing additional noise. Their amplifiers are ideal for high-performance applications, such as in communication systems and sensor interfaces, where minimizing distortion and maximizing the signal-to-noise ratio is vital. These amplifiers are versatile, supporting a range of frequencies and conditions, providing clients with flexible, high-performance solutions. As a trusted partner, Analog Circuit Works ensures their LNAs deliver the accuracy and reliability required for sophisticated electronic systems.
The aLFA-C is a sophisticated interfacing ASIC designed for use in space-borne infrared readout integrated circuits (ROICs) and other types of image sensors. It serves to replace much of the traditional infrastructure found in classic front-end electronics, thereby streamlining operations and improving efficiency. Notably, the device can function on a minimal single unregulated power supply, facilitated by on-chip Low Dropout regulators (LDOs) and Regulators. The aLFA-C's architecture allows it to run on either an external clock or a crystal oscillator interface, contributing to versatile deployment scenarios. With SpaceWire as its interface for external communication, the device can integrate smoothly into a range of systems. The aLFA-C also features a fully programmable sequencer to manage the ROIC, offering eight levels of nesting and dynamic reprogrammability. In terms of adaptability, the aLFA-C provides 32 programmable level single-ended digital outputs that can be transformed into 16 differential outputs using CMOS, LVDS, or CML formats. Additionally, it includes 16 programmable threshold single-ended digital inputs, which can be configured into LVDS or CML inputs. With capabilities for resistance, voltage, and current measurement, and a wide operating temperature range from 35K to 330K, the aLFA-C is robust and suited for demanding environments.
This product is designed with an architectural approach focused on maximizing efficiency in Class-D driver applications across a variety of power levels. It incorporates self-determining technology to optimize operation, ensuring that the energy consumption is minimized while maintaining high performance. This innovation is crucial for applications needing efficient power management, particularly in power-sensitive environments where maximized efficiency is essential for performance and longevity.
The Bandgap Reference Block provided by VivEng is a crucial component in many analog and digital circuits, known for its stability and precision. This block generates a stable voltage reference, which is vital for the consistent operation of other circuit elements such as ADCs and DACs. The block is equipped with features like trimmable reference voltage, bias currents, and alerts for over and under temperature conditions. Additionally, it includes a power-on reset feature, ensuring that it operates reliably under various environmental conditions and power supply fluctuations.
The GNSS VHDL Library is a high-performance, sophisticated library developed to streamline the integration of satellite navigation capabilities within digital hardware systems. Tailored for flexibility and adaptability, this library facilitates various GNSS systems, including GPS, GLONASS, and Galileo. Its design enables effective signal processing and navigation solutions through dedicated VHDL modules. A notable aspect of the GNSS VHDL Library is its compatibility with multiple hardware platforms and architectures, which include SPARC V8 and RISC-V systems. It encompasses modules like fast search engines, Viterbi decoders, and self-test units, allowing developers to customize and refine their application according to specific needs. The library supports a range of configurations: it can be tailored to manage different numbers of channels, frequencies, and system modules as specified by user requirements. By implementing a single, comprehensive configuration file, it minimizes the need for repetitive customization across different systems, which can significantly decrease development times and costs.
The Telecommunication ADC is designed for asynchronous operations within telecommunication applications, providing efficient data conversion capabilities that are crucial in robust communication systems. With an 8-bit resolution, this ADC ensures accurate signal conversion, maintaining the integrity of telecommunication data streams. Fabricated using the TSMC 28HPC process, this component is engineered to support data throughput at speeds reaching 1.2 Gbps, ensuring rapid data processing capabilities ideal for high-bandwidth applications. It embodies a design that emphasizes both performance and precision, critical for maintaining the fidelity of transmitted data. This ADC distinguishes itself with its capability to handle asynchronous data, making it suitable for a varied range of telecommunication contexts. It's designed to cater to the advanced needs of modern digital communication systems, ensuring compatibility with various industry standards and enhancing overall system performance.
Aimed primarily at high-performance sensor arrays, this IP suite provides a robust solution for analog conversion and amplification needs in modern electronic systems. SystematIC ensures that these converters and amplifiers meet stringent requirements for low noise and high accuracy, facilitating seamless integration with a variety of sensor types. This component family includes SAR and Sigma-Delta A/D converters, with resolutions from 10 to 16 bits, designed to handle dense data processing tasks reliably. SystematIC offers comprehensive support for integrating these components into larger systems, making them ideal for applications requiring precise analog data processing.
The ATEK552 is a high-power Gallium Nitride (GaN) Power Amplifier with exceptional output capabilities. Operating within the range of 3 GHz to 17 GHz, this amplifier delivers a notable output power of 6 watts. With a gain of 21 dB, the ATEK552 is crafted to boost signal levels efficiently in demanding RF environments. Deprecated for its robust performance, the ATEK552 can adapt seamlessly into various applications due to its flexible power supply requirements, with Vdd set at 28V and a current draw of 510 mA. Its die-based construction facilitates easy integration into larger systems, making it a suitable choice for bands requiring high power amplification. This power amplifier is ideal for use in telecommunications, defense systems, and aerospace applications, where dependable amplification and high power are crucial. Its solid performance metrics ensure reliability and efficiency, supporting advanced communications infrastructure and secured data transmission.
The ADQ35-PDRX is a high-performance single-channel digitizer that offers 5 GSPS sampling speed, making it perfectly suited for pulse data systems. This innovative device integrates dual-gain channel technology to extend its dynamic range by 3 bits, presenting the equivalent of a 16-bit digitizer with the advantage of higher sample rates. This makes ADQ35-PDRX particularly suitable for applications requiring detailed and precise signal capture without saturation. The device features a DC-coupled input with a bandwidth up to 2 GHz, tailored to ensure optimal signal detection. The onboard Xilinx Kintex Ultrascale KU115 FPGA supports custom real-time signal processing, ensuring high flexibility and adaptability to various specific requirements. This digitizer includes comprehensive firmware options to enhance its functionality and user-friendliness, supporting efficient peer-to-peer streaming to CPUs or GPUs. It's optimized for demanding environments like Time-of-Flight Mass Spectrometry and LiDAR, ensuring robust performance across different sectors.
The TIA Linear Amplifier caters to both limited and unlimited signal transmission types. It offers comprehensive support for single-lane transmissions at data rates of 25G, 28G, 56G, 64G, and 112G. This makes it indispensable for applications requiring precise signal boosting and minimal distortion.
The Magnetic Hall Sensor developed by SystematIC excels in isolated current sensing at both direct current and low frequencies. These Hall sensors perform well in integrating the sensor elements along with associated readout electronics using standard CMOS technology. SystematIC has successfully developed cost-effective, fully integrated current sensor ICs that are capable of delivering high gain accuracy and low offset. The sensor is adaptable for wide operating temperatures, ensuring its robustness and reliability. With this technology, customers benefit from good isolation properties and zero magnetic hysteresis, vital for accurate current measurement in applications requiring high-frequency response and low noise.
The RT125 model by RafaelMicro offers a sophisticated 28Gbps signal regeneration solution; it combines a Clock Data Recovery (CDR) unit, Limiting Amplifier (LA), and Trans-Impedance Amplifier (TIA) into a single module. This integration caters to high-speed optical communication needs, ensuring high data integrity and minimal signal loss over extended distances.
The CC-100IP RF is designed to address RF emissions within integrated circuits, enhancing on-chip cybersecurity while drastically reducing dynamic currents. This IP block reduces emissions by creating low impedance pathways in power grids, benefiting systems with a six-fold increase in reservoir capacitance efficiency. Its innovative design mitigates digital noise, acting as a critical technological advancement in chip design.
Akronic specializes in designing state-of-the-art analog and mixed-signal integrated circuits. Their extensive experience covers all essential building blocks used in modern telecom and radar transceiver radios. Akronic's portfolio includes low-pass filters, often utilizing Leapfrog, OPAMP, or Gm-C architectures. These incorporate sophisticated configurations like Chebyshev or Butterworth to achieve high cut-off frequencies exceeding 1GHz. Their ICs also encompass base-band functions such as bandgap voltage references and gain-control operations, ensuring precise signal management. The company's expertise extends to high-speed signal converters, featuring both switched-capacitor and current-source DACs, along with advanced ADC designs like successive-approximation and time-interleaved architectures. Additionally, Akronic's frequency synthesis capabilities embody both fractional and integer-N PLL technologies, complete with multi-modulus prescalers and loop filters. Their focus on minutiae extends through aspects like VCO design, including innovative drivers and multiplexing solutions, making their analog and mixed-signal ICs a hallmark of advanced integrated design. Akronic integrates power-efficient designs with meticulous attention to signal integrity and stability. They provide linear-in-dB or stepped gain-control mechanisms and boast advanced AGC and ALC loop designs. Their emphasis on advanced compensation techniques, like LO leakage control, ensures optimal real-world performance, reinforcing Akronic’s authority in analog and mixed-signal innovation.
Akronic's RF and mm-Wave integrated circuits are at the forefront of high-frequency subsystem designs for wireless radio transceivers. They operate over a wide range of frequencies from a few MHz to up to 100GHz. With a profound engineering approach, the company optimizes its circuit topology choices to enhance performance attributes such as noise reduction, output power, and linearity, while limiting power consumption. This strategy ensures minimal silicon footprint with maximum operational efficiency. The company excels in designing DC and single sideband (SSB) up/down conversion mixers, employing both active and passive components. Their ICs also feature essential RF elements like variable gain amplifiers and low noise amplifiers, which are critical for radio transceiver applications. The inclusion of VCOs, power detectors, and sophisticated LO generation tools rounds out a comprehensive RF and mm-Wave offer. Akronic's methodologies involve sophisticated supply and ground routing, and thorough internal de-coupling strategies. Their extensive use of electromagnetic simulations and a special 3D EM simulation approach guarantee a high correlation between simulations and intermediate results. This careful alignment ensures Akronic's RF and mm-Wave ICs deliver unparalleled functionality and integration for client applications.
The NDR504 represents a sophisticated four-channel downconverter crafted for challenging RF environments. Covering frequencies from 18 to 40 GHz, it offers IF outputs below 18 GHz, making it versatile for a wide range of applications. This rugged component is particularly designed for environments where seamless and coherent phase signal processing across various channels is crucial. This downconverter utilizes a 2-band sub-octave preselector and ensures reliable phase coherence throughout its channels, facilitated by a singular integrated local oscillator. Its robust design allows it to be deployed in varied settings, including ground-based and airborne systems, and ensures compatibility with existing Epiq Solutions platforms for further data processing. With dimensions and weight conducive to flexible installation, the NDR504 offers unparalleled performance in modern RF landscapes, supporting operations from spectrum awareness and direction finding to wideband signal recording. Its capability to function efficiently at a range of operating temperatures further extends its operational reliability in harsh and dynamic environments.
The GS61008P Enhancement Mode GaN Transistor excels in delivering high power performance with its efficient and compact design. Capable of handling high currents, this transistor minimizes on-resistance, ensuring minimal energy loss, which is crucial for high-density power converters. Designed for bottom-side cooling, it offers superior thermal management, effectively dissipating heat to ensure stable operation. Its small footprint and enhanced electrical characteristics make it a preferred choice in systems requiring high power efficiency, from renewable energy setups to cutting-edge consumer electronics products.
Granite SemiCom's Sensor Interface Conditioner (SIC) is a cutting-edge component designed to process and amplify small differential voltages generated by industrial sensors. It is particularly suited for managing signals from sensors utilizing Wheatstone Bridge configurations, offering precise amplification for communication over significant distances. The SIC can deliver digital outputs through an I2C link, enhancing compatibility with various host devices. With capabilities for remote management and encryption, it ensures data integrity and robust operation across dispersed sensor networks.
The GS66516T represents a state-of-the-art GaN Transistor engineered for high-performance applications. It offers significant improvements in power conversion techniques, reducing energy losses and enhancing thermal management. Capable of supporting high current levels with its advanced structure, this component is ideal for sectors needing optimal power solutions such as telecommunications and renewable energy setups, ensuring durable and consistent operational benefits.
The GS66506T Transistor is equipped with top-side cooling, offering significant thermal advantages for systems with high power densities. This product reduces the on-resistance further to provide efficient power management suitable for cutting-edge applications in sectors such as aerospace and defense. With a compact form factor, it allows for seamless integration into high-performance solutions, providing engineers with a reliable component for demanding operational environments.
The GS-065-018-2-L GaN Transistor is a formidable solution designed to handle high power requirements with ease and reliability. With low on-resistance and a design that prioritizes thermal management, this transistor is perfect for high-performance sectors such as data centers and commercial power systems. It liberates designers from the constraints of silicon-based components by offering improved power density, efficiency, and size reduction capabilities to meet the challenges of modern electronics applications.
The GS66502B GaN Transistor offers enhanced power efficiency, a critical component for advanced power systems requiring rapid switching and reliable performance. Its low on-resistance enables effective power management, paving the way for efficient design in markets like telecommunications and high-tech industrial setups. This plug-and-play solution streamlines integration into existing designs while laying a foundation for future innovations in power electronics.
The GS-065-011-2-L, synonymous with efficiency and performance, is optimized for applications needing robust solutions to manage power efficiently. Its innovative design lowers on-resistance and enhances heat dissipation, crucial for efficient operation in automotive and renewable energy technologies. The device meets high industry standards for reliability and endurance, ensuring long-term performance in systems where power consistency and thermal stability are critical.
The GS-065-060-3-B is a versatile GaN Transistor designed for compact applications demanding high efficiency and minimal space consumption. This product efficiently manages power with its low on-resistance and advanced thermal management, supporting contemporary electronics and complex industrial controls. Its robust yet streamlined design offers a premiere choice for developers looking to enhance the functionality and output of space-sensitive power solutions.
Engineered for high-power applications, the GS-065-060-5-B-A GaN Transistor is designed to deliver consistent power management capabilities. With a specialized package supporting bottom-side cooling, it excels in thermal conductivity and power efficiency. This feature-rich transistor supports high current flows, making it suitable for large industrial machines and renewable energy generators where reliability and efficiency are paramount.
The GS66508T GaN Transistor combines high power handling with excellent thermal performance, making it perfect for applications in demanding environments. It features a low on-resistance and optimized gate charge, enabling exceptional efficiency in power conversion. This transistor is engineered for power-intensive industries, including automotive and large-scale industrial control systems. Its robust architecture and high efficiency make it a key component in the movement towards more sustainable and efficient electronic advancements.
The GS66516B GaN Transistor is tailored for high current operations, offering remarkable efficiency and reliability in power-driven environments. Its innovative design facilitates low on-resistance and high thermal management capabilities, which are crucial for maintaining stability and performance in high-power applications like industrial automation and large-scale power grids. Its robust packaging ensures longevity and durability, enabling engineers to develop solutions that handle power structurally and efficiently.
The GS-065-011-1-L GaN Transistor is a powerful semiconductor designed for devices that demand high power and efficiency. It boasts of reduced on-resistance and superior thermal management, key for applications in energy storage and heavy-duty power conversion. This transistor's ability to handle high power levels without sacrificing efficiency makes it a vital component for sectors focusing on sustainable energy production and efficient industrial systems.
The GS-065-060-5-T-A is a high current GaN transistor ideal for applications that demand robust current delivery without compromising on efficiency. This advanced component is lightweight yet powerful, featuring a low on-resistance and substantial gate charge capacity, enhancing the overall system performance in challenging operational conditions. The top-side cooling capability further mitigates thermal issues, making it suitable for dynamic environments such as modern data centers and hybrid automotive power systems.
A top-side cooled variant, the GS61008T Enhancement Mode GaN Transistor revolutionizes power management with its outstanding thermal performance and superior power handling capability. It couples high current throughput with reduced on-resistance, optimizing power efficiency in compact spaces. Its robust construction makes it well-suited for applications in harsh operating conditions, including advanced computing equipment and next-generation telecom infrastructure. The GS61008T presents an ideal solution for designs aimed at reducing size while maximizing output efficiency.
Designed for high-voltage applications, the GS66504B GaN Transistor is focused on delivering consistent and efficient power management. It performs exceptionally well under high-current conditions, minimizing energy losses with its low on-resistance design. Key applications include renewable energy systems and high-voltage industrial equipment, where its advanced attributes contribute to enhanced reliability and efficiency. This GaN transistor embodies the shift towards more sustainable and cost-effective electronics solutions.
Engineered for high-efficiency, the GS-065-030-2-L GaN Transistor excels in power management applications that demand rapid switching and minimal energy loss. This component stands out with its excellent thermal properties and low on-resistance, making it ideal for use in diverse fields such as industrial automation and power conditioning. As a core part of next-generation power systems, it enables massive scale integration of energy-efficient technologies with ease and consistency.