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All IPs > Memory & Logic Library > Embedded Memories > TP SRAM

TP SRAM

From Uleadtek, Inc.

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Description

Two-Port Synchronous SRAM (TP SRAM) by Uleadtek offers a high-efficiency, dual-function memory solution that optimizes both read and write operations without compromise. It includes dedicated ports for reading and writing, distinguished by a positive edge trigger clock which allows for predictable timing and reliable data throughput. As with the SP version, TP SRAM uses an asynchronous output enable feature to facilitate ease of control in data transactions, boosting the ability to adapt efficiently within various electronic environments.

TP SRAM is built to support a word range from 8 to 512, enabling versatility in memory allocation for a variety of applications. It supports static operation architectures, ensuring energy-efficient performance by eliminating unnecessary active cycles. This product is well-suited for embedded applications that require stable, high-speed RAM while maintaining minimal power draw, making it an attractive solution for modern processors and devices.

Designed for multi-technology processes from 0.13μm to 0.25μm, Uleadtek’s TP SRAM showcases adaptability across a range of manufacturing capabilities. This flexibility in design translates into ease of deployment, potentially spanning wide applications in technology sectors that require simultaneous read/write operations without downstream delay.

Foundries & Process Nodes
Foundry Process Nodes
UMC 130nm
150nm
180nm
250nm
Tech Specs
Class Value
Categories Memory & Logic Library > Embedded Memories
Word Range 8~512
Bit Range 4~64
TKQ 0.75ns to 1.98ns
Area 0.19mm² to 0.46mm²
Availability All Countries & Regions
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