Toggle MRAM leverages a patented cell design featuring a one transistor and one magnetic tunnel junction (MTJ) memory cell. This configuration allows for robust data retention of over 20 years, with high reliability due to its ability to maintain non-volatility during power off conditions. The MTJ structure consists of a fixed magnetic layer, a tunnel barrier, and a free magnetic layer that influences electron spin tunneling, providing a dependable resistance-based read/write mechanism. Toggle MRAM merges SRAM's speed and Flash's non-volatility, delivering an 'instant-on' capability crucial for modern electronics.
