Everspin's Toggle MRAM technology offers a dense and reliable memory solution, utilizing a single transistor, single magnetic tunnel junction (MTJ) memory cell. The unique Toggle MRAM cell design affords high reliability by ensuring data remains non-volatile for two decades, even under variable temperature conditions. The memory integrates seamlessly with existing silicon circuits, provides quick access similar to SRAM, and maintains data in the event of power loss like flash memory.
The operational mechanism involves reading data by activating a pass transistor and comparing the MTJ's resistance to a reference. During write operations, the magnetic orientation of the MTJ is altered by intersecting magnetic fields from write lines, without affecting other cells. This magnetic-based storage approach achieves high-speed data access while protecting information integrity across different electronic applications.
Toggle MRAM is particularly useful in systems requiring fast power cycles with non-volatile memory needs. Its endurance and reliability make it a favored option in many industrial and consumer electronics, paving the way for its deployment in various high-demand scenarios.
