Thermal Oxide Processing is a critical service offered by NanoSILICON, Inc., utilizing silicon dioxide (SiO2) as a key insulation material in semiconductor devices. This material serves as a field oxide, separating conductive layers like polysilicon and metal from the silicon base. Additionally, it functions as a gate oxide, playing a crucial role in the device's operation. Silicon wafers are subjected to oxidation within a high-temperature range of 800°C to 1050°C in quartz tube furnaces, ensuring a slow and controlled heating process to prevent deformation.
The characteristics of dry oxidation, which include slow oxide growth and high density, make it suitable for high breakdown voltage applications. On the other hand, wet oxidation offers faster growth, even at lower temperatures, allowing for the creation of thicker oxide layers. These processes are conducted using ultra-pure steam and oxygen sources, ensuring batch thickness uniformity within ±5% and intra-wafer uniformity within ±3%.
Technical proficiency is emphasized with the employment of advanced measurement tools like the Nanometrics 210 for optical parameter adjustment and precise film thickness verification. This technique allows for accurate measurement at various stages of the semiconductor fabrication, from as small as 10µm, guaranteeing the high quality of the thermal oxide films.
