Spin-transfer Torque MRAM (STT-MRAM) is a highly advanced memory technology offering remarkable scalability, energy efficiency, and data retention. Using the principle of spin-transfer torque, it provides significant energy reductions during memory cell switching, supporting high-density designs essential for data centers and industrial applications. The technology is engineered for extensive durability, providing persistent memory solutions without the need for supercapacitors or batteries for energy backup, and delivering high bandwidth and low latency through a DDR4-like interface.
