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All IPs > Memory Controller & PHY > NAND Flash > NRAM Technology

NRAM Technology

From Nantero, Inc.

Description

NRAM Technology from Nantero is a cutting-edge non-volatile random access memory that stands out due to its use of carbon nanotubes (CNTs). These memory solutions promise significant advantages in terms of speed and durability compared to traditional memory technologies. NRAM is heralded for its potential to surpass DRAM and Flash memory by delivering faster read and write operations while being more power-efficient, especially in non-operational states where it consumes almost negligible power.

This technology is built around CNT fabric, which consists of ultra-thin carbon cylinders known for their strength and conductive properties. This unique material allows NRAM to operate at speeds comparable to DRAM but with the non-volatility of Flash memory. The robust nature of carbon nanotubes also ensures high endurance, enabling the memory to handle vast numbers of cycles without degradation.

NRAM can be manufactured using standard CMOS fabrication processes, negating the need for specialized equipment. This cost-effective production model allows it to integrate seamlessly into existing manufacturing systems. With scalability to sub-5nm processes and compatibility with 3D structures, this memory solution is positioned as a revolutionary leap poised to enable a wide range of electronic products across multiple industries.

Features
  • Limitless scalability
  • High endurance
  • Environmentally resistant
Foundries & Process Nodes
Foundry Process Nodes
Samsung 55nm
TSMC 28nm
Tech Specs
Class Value
Categories Memory Controller & PHY > NAND Flash
Memory & Logic Library > Embedded Memories
Memory & Logic Library > Standard cell
Read Speed Same as DRAM
Write Speed 100 times faster than NAND
Standby Power Essentially zero
Availability All Countries & Regions
Applications
  • Consumer electronics
  • Automotive
  • Enterprise systems
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