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All IPs > Memory Controller & PHY > SRAM Controller > MRAM - Magnetoresistive Random-Access Memory

MRAM - Magnetoresistive Random-Access Memory

From DXCorr Design

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Description

Magnetoresistive Random-Access Memory (MRAM) is a cutting-edge memory technology widely acclaimed for its stability and endurance. DXCorr has engineered MRAM solutions that deliver non-volatility and fast write and read speeds, positioning it as a reliable memory choice for diverse applications ranging from consumer electronics to high-performance computing.

MRAM technology is distinguished by its ability to offer higher endurance compared to traditional RAMs, mainly due to its robust magnetic storage elements. This characteristic extends the memory's lifespan and efficiency in data retention, minimizing data loss and ensuring reliable performance across various operating environments. As computing demands scale, MRAM serves as a steadfast component facilitating seamless data management and retrieval processes.

Incorporating DXCorr’s MRAM into systems not only bolsters data security but also enhances energy efficiency, a crucial factor in the design of sustainable computing solutions. Its incorporation into semiconductor designs helps in achieving superior power-performance metrics while maintaining robustness, making it a pivotal choice for modern memory-intensive applications.

Foundries & Process Nodes
Foundry Process Nodes
Intel Foundry 7nm
Tech Specs
Class Value
Categories Memory Controller & PHY > SRAM Controller
Memory & Logic Library > Embedded Memories
Availability All Countries & Regions
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