Magnetoresistive Random-Access Memory (MRAM) from DXCorr offers a non-volatile storage solution that combines the speed and endurance of SRAM with the non-volatility of flash memory. This versatile memory technology is suitable for a wide range of applications, including embedded systems, portable devices, and data logging.
DXCorr's MRAM stands out by providing rapid access times and robust data retention without the need for power. This makes it an ideal choice for systems requiring immediate data availability after power restoration. By leveraging the Spin-Transfer Torque (STT) and Spin-Orbit Torque (SOT) mechanisms, these MRAM devices deliver high-speed performance and low power consumption.
The company's MRAM technology is particularly lauded for its scalability across various semiconductor process nodes, making it an adaptable choice for advancing technological landscapes. Its ability to quickly write and read data without wear over time positions DXCorr's MRAM as a superior choice for efficient, high-performance memory applications.
