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All IPs > Memory Controller & PHY > NAND Flash > LEE Fuse ZA

LEE Fuse ZA

From Floadia Corporation

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Description

The LEE Fuse ZA offers a robust anti-fuse memory solution, optimized for one-time programmable (OTP) applications such as system trimming and memory redundancy setups. This IP eliminates the need for additional manufacturing masks, offering a cost-effective path to integration within wide-ranging process nodes from 180nm down to advanced sub-10nm technologies.

Its design, requiring only two or three metal layers, offers flexibility in using upper metal layers for further circuit integration, broadening its applicability across several advanced process technologies. This feature ensures that the LEE Fuse ZA can seamlessly integrate into complex semiconductor environments without the substantial costs usually associated with new IP incorporation.

LEE Fuse ZA's support for extensive temperature ranges and long retention periods makes it a valuable resource for automotive standard products requiring severe condition reliability. Its track record spans various manufacturing statuses, making it a mature choice for industries looking for a dependable OTP solution capable of handling modern technology nodes efficiently.

Features
  • High temperature and long retention
  • Applicable to wide range of processes
Foundries & Process Nodes
Foundry Process Nodes
HHGrace 500nm
Samsung 10nm
Tech Specs
Applications
  • Automotive trimming
  • Memory redundancy
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