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All IPs > Memory Controller & PHY > NAND Flash > LEE Flash ZT

LEE Flash ZT

From Floadia Corporation

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Description

The LEE Flash ZT is engineered for automotive and industrial environments where high temperature and durability are critical. What sets the LEE Flash ZT apart is its zero additional mask requirement, significantly reducing manufacturing costs and enabling rapid integration within existing product lines. Its ability to maintain data retention over 20 years at 125°C demonstrates its reliability in demanding applications.

Lee Flash ZT supports a wide range of use cases, making it ideal for precision trimming, parameter storage, and sensor integration in high-performance electronic devices. It leverages FN tunneling to achieve ultra-low power during program and erase cycles, which not only cuts down operation costs but also accelerates testing and final product release.

Its compact form factor and compatibility with standard CMOS processes allow companies to re-use existing designs and IPs, eliminating the need for bespoke development efforts. This adaptability combined with its performance characteristics makes it a viable solution for manufacturers looking to enhance their product lines without incurring substantial initial investments or production delays.

Features
  • Zero mask addition for easy implementation
  • High-temperature support with long retention
Tech Specs
Class Value
Categories Memory Controller & PHY > NAND Flash
Memory & Logic Library > Embedded Memories
Memory Controller & PHY > Flash Controller
Memory Controller & PHY > DDR
Process platform 180BCD
Memory Size 512 Bytes
Supply Voltage 2.5V to 5.5V
Availability All Countries & Regions
Applications
  • Automotive sensors
  • Power and analog ICs
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