The LEE Flash ZT IP is designed to deliver efficient non-volatile memory solutions for sensor, power, and analog IC applications, particularly within the automotive sector. This IP is distinguished by its capability to operate at high temperatures, ensuring a 20-year data retention at 125°C without the need for additional manufacturing masks, thereby reducing production costs significantly. The ZT model utilizes a standard CMOS process, allowing for easy integration with existing design and IP infrastructures. This compatibility ensures a streamlined and cost-efficient transition to advanced memory solutions. With the FN tunneling technology, it achieves minimal power consumption during program and erase operations, supporting extensive programming cycles and offering the durability required for high-demand environments.
