The LEE Flash G2 represents a cutting-edge evolution from its predecessor, offering enhanced memory capabilities and innovative features that cater to advanced electronic requirements. Built upon the proven architecture of the LEE Flash G1, the G2 version incorporates a clever switch transistor array, allowing for direct integration with logic circuits and enabling non-volatile SRAM functionalities. This design maintains a low power profile by not requiring high voltage for read operations and reduces layout complexity by eliminating isolation areas.
This innovative flash solution is capable of supporting memory capacities up to several megabytes, making it ideal for applications that demand larger storage space while prioritizing energy efficiency. The G2 architecture also ensures compatibility with existing CMOS platforms without the need for changes in the SPICE model, facilitating the adoption of G2 technology within existing processes seamlessly.
Other notable attributes include its suitability for high-temperature environments and long retention times, positioning it as a reliable option for automotive and industrial applications. The use of few additional masks further minimizes costs and accelerates production cycles, making G2 a cost-efficient choice for next-generation flash memory requirements.
