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All IPs > Memory Controller & PHY > NAND Flash > LEE Flash G2

LEE Flash G2

From Floadia Corporation

Description

Building on the G1 architecture, LEE Flash G2 introduces groundbreaking features that extend its capabilities beyond traditional Flash solutions. This IP offers seamless integration with logic circuits, enabling the creation of non-volatile SRAM configurations. The LEE Flash G2 operates without the need for high-voltage isolation, ensuring simplified layout designs and ultra-low power consumption. This makes it particularly valuable for applications demanding high-speed operations and substantial memory capacity, extending up to several megabytes. The G2's support for standard CMOS processes and its minimal impact on the existing PDK and Spice model enable designers to incorporate non-volatile functionalities within logic circuits effortlessly, paving the way for innovative circuit designs.

Tech Specs
Class Value
Categories Memory Controller & PHY > NAND Flash
Memory & Logic Library > Embedded Memories
Memory Controller & PHY > Flash Controller
Process platform 55BCD
Memory Size 128K-Byte (1M-bit)
P/E Cycles 100K
Operation Temperature(Tj) -10~175°C
Data Retention 10 years@175°C post PE 10K
Supply Voltage 1.2V ±10%
Availability All Countries & Regions
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