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All IPs > Memory Controller & PHY > NAND Flash > LEE Flash G1

LEE Flash G1

From Floadia Corporation

Description

LEE Flash G1 is a highly cost-effective embedded Flash solution optimized for scalability down to a 40nm process, making it an excellent fit for medium memory capacity applications requiring up to several hundred kilobytes. Built on a simplified SONOS architecture, it supports automotive-grade temperature and quality standards. The G1 model allows seamless integration with standard CMOS processes, preserving existing IPs and macros without altering the SPICE model of logic transistors, thus avoiding costly redesigns. Its minimal mask requirement (2-3 additional masks) further ensures a cost-efficient setup, with reduced testing and bake times achieved through innovative power management techniques. Proven for long-term data retention in high-temperature conditions, LEE Flash G1 demonstrates unparalleled endurance and performance for demanding embedded applications.

Foundries & Process Nodes
Foundry Process Nodes
SMIC 90nm
TSMC 130nm
UMC 110nm
Tech Specs
Class Value
Categories Memory Controller & PHY > NAND Flash
Memory & Logic Library > Embedded Memories
Memory Controller & PHY > Flash Controller
Process platform 130BCD
Memory Size 64 Kbyte
Data Bus(Main) 32 I/O
P/E Cycles 100k
Operation Temperature(Tj) -40~175°C
Data Retention 10 years@175°C post PE 10K
High Temperature Operation SONOS device with controlled retention life
Supply Voltage 1.5V ±10%
Availability All Countries & Regions
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