The LEE Flash G1 is designed to cater to cost-sensitive embedded flash applications, leveraging a simple SONOS architecture that scales efficiently down to 40nm. This flash technology is perfect for moderate memory capacity needs, typically up to several hundred kilobytes, making it suitable for automotive and power-sensitive tasks. The G1 Flash supports a wide temperature range, enhancing its viability for extreme automotive requirements and ensuring long-term data retention stability.
One of the standout features of the LEE Flash G1 is its power efficiency, characterized by low power consumption during program and erase cycles. This efficiency is achieved through Fowler-Nordheim tunneling technology, drastically minimizing power requirements compared to traditional methods. Furthermore, this technology simplifies the integration of flash memory by requiring only 2 to 3 additional masks, reducing the overall cost and complexity of chip fabrication.
Operating on a standard CMOS logic process without altering the SPICE model, LEE Flash G1 allows for the re-use of existing IPs and design assets, offering a path to cost savings and simplifying design processes. The G1's architecture also shortens baking and testing times, significantly cutting down on chip production costs while maintaining quality and reliability under rigorous conditions.
