The GS66508T GaN Transistor is designed for applications needing high performance and efficiency, such as advanced power supplies and high-frequency inverters. Featuring a robust top-side cooling methodology, this GaN transistor provides enhanced thermal dissipation, driving efficiency even in compact designs. It offers a revolutionized semiconductor architecture with a 50 mΩ RDS(on) and a charge of 6.1 nC, ideal for achieving low power loss and better performance in power-sensitive applications. This makes it particularly effective for consumer electronics and industrial systems where space and power efficiency are critical concerns.
