A top-side cooled variant, the GS61008T Enhancement Mode GaN Transistor revolutionizes power management with its outstanding thermal performance and superior power handling capability. It couples high current throughput with reduced on-resistance, optimizing power efficiency in compact spaces. Its robust construction makes it well-suited for applications in harsh operating conditions, including advanced computing equipment and next-generation telecom infrastructure. The GS61008T presents an ideal solution for designs aimed at reducing size while maximizing output efficiency.
