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All IPs > Analog & Mixed Signal > Power Management > GS-065-008-1-L 650V Enhanced GaN Transistor

GS-065-008-1-L 650V Enhanced GaN Transistor

From GaN Systems

Description

Delivering reliable performance at high voltages, the GS-065-008-1-L 650V Enhanced GaN Transistor is crafted to meet the needs of power-hungry applications. With its low on-resistance and efficient thermal characteristics, this transistor supports advanced systems requiring continuous & reliable power handling. This GaN transistor stands out by providing high speed switching and efficient power conversion in demanding environments like industrial machinery and power distribution frameworks.

Foundries & Process Nodes
Foundry Process Nodes
TSMC 28nm
Tech Specs
Class Value
Categories Analog & Mixed Signal > Power Management
Current Rating 8 A
On-Resistance 225 mΩ
Gate Charge 1.5 nC
Package Dimensions 5.0 x 6.0 x 0.85 mm
Part Number GS-065-008-1-L
Availability All Countries & Regions
Applications
  • Industrial Machinery
  • Power Distribution Systems
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