Weebit Nano has embarked on an ambitious journey to redefine discrete memory chip development with its groundbreaking ReRAM solutions. Discrete ReRAM serves as a stand-alone memory technology alternative, offering an innovative design that facilitates higher densities and improved scaling capabilities. This technology stands out with its small cell size and integration capabilities thanks to collaboration efforts with notable industry partners such as CEA-Leti.
Discrete ReRAM targets multiple markets, including storage-class memory and persistent memory domains, offering significant speed and power benefits over existing technologies such as NOR and NAND Flash. Its capability to operate under extreme conditions while ensuring data integrity and reliability marks it as an ideal choice for critical applications in the defense, aerospace, and automotive sectors.
The development of discrete chips leverages a unique 1S1R architecture, which significantly reduces the traditional die size and supports advanced 3D stacking, paving the way for the next generation of NVM technologies. By focusing on selector technology through a back-end-of-line (BEOL) approach, Weebit Nano's Discrete ReRAM promises improved performance and scalability that meet the evolving needs of cutting-edge semiconductor applications.
